公开(公告)号：US20150103586A1

公开(公告)日：2015-04-16

申请号：US14055385

申请日：2013-10-16

Applicant: QUALCOMM Incorporated

Inventor： Sungryul KIM ,  Taehyun KIM ,  Jung Pill KIM

IPC: G11C11/16

CPC classification number: G11C17/18 ,  G11C11/1675 ,  G11C17/02 ,  G11C17/16 ,  G11C17/165

Abstract: A one-time programmable (OTP) memory having a plurality of cells, each cell having a magnetic tunnel junction (MTJ) device; and the OTP memory further including a write driver to drive each MTJ device to an anti-parallel state, and a program driver to drive a subset of the MTJ devices to a blown state depending upon the information to be stored.

Abstract translation: 具有多个单元的一次性可编程（OTP）存储器，每个单元具有磁性隧道结（MTJ）装置; 并且所述OTP存储器还包括用于将每个MTJ设备驱动到反并行状态的写入驱动器，以及根据要存储的信息将所述MTJ设备的子集驱动到吹扫状态的程序驱动器。