公开(公告)号：US20210082902A1

公开(公告)日：2021-03-18

申请号：US17093400

申请日：2020-11-09

Applicant: Socionext Inc.

Inventor： Isaya Sobue

IPC: H01L27/01

Abstract: A capacitive element using VNW FETs is provided. First and second components each constituting a transistor are arranged in an X direction. From the first component, a first gate interconnect extends away from the second component, and a first top interconnect and a first bottom interconnect extend toward the second component. From the second component, a second gate interconnect extends toward the first component, and a second top interconnect and a second bottom interconnect extend away from the first component. The first top interconnect, the first bottom interconnect, and the second gate interconnect are connected.