公开(公告)号：US20130264678A1

公开(公告)日：2013-10-10

申请号：US13907547

申请日：2013-05-31

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Aomar Halimaoui ,  Daniel Bensahel

IPC: H01L29/06 ,  H01L21/764

CPC classification number: H01L29/0649 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/76262 ,  H01L21/764

Abstract: A method for making a silicon layer extending on an insulation layer, including the steps of forming a silicon-germanium layer on at least a portion of a silicon wafer; transforming portions of the silicon-germanium layer into porous silicon pads; growing a monocrystalline silicon layer on the silicon-germanium layer and on the porous silicon pads; removing the silicon-germanium layer; oxidizing the porous silicon pads; and depositing an insulation material on the silicon layer.

Abstract translation: 一种用于制造在绝缘层上延伸的硅层的方法，包括以下步骤：在硅晶片的至少一部分上形成硅 - 锗层; 将硅 - 锗层的部分转变成多孔硅垫; 在硅 - 锗层和多孔硅垫上生长单晶硅层; 去除硅 - 锗层; 氧化多孔硅垫; 以及在所述硅层上沉积绝缘材料。