公开(公告)号：US20200303903A1

公开(公告)日：2020-09-24

申请号：US16802447

申请日：2020-02-26

申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

发明人： Hideki YAGI ,  Naoko KONISHI ,  Takuo HIRATANI

IPC分类号： H01S5/227 ,  H01S5/026

摘要： A method for manufacturing an optical semiconductor device, includes the steps of: forming a plurality of compound semiconductor layers including a sacrificial layer, an absorption layer, and a core layer; forming a first mesa from the plurality of compound semiconductor layers; forming an embedding layer that is a semiconductor layer having the first mesa embedded therein; after the step of forming the embedding layer, etching the sacrificial layer to form a chip including the plurality of compound semiconductor layers and the embedding layer; bonding the chip to a substrate comprising silicon and having a waveguide; and etching a portion of the first mesa of the chip bonded to the substrate to form a second mesa adjacent to the first mesa. The second mesa includes the core layer and is optically coupled to the waveguide of the substrate.