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公开(公告)号：US20230275400A1
公开(公告)日：2023-08-31
申请号：US18143110
申请日：2023-05-04
CPC分类号： H01S5/1014 , H01S5/068 , H01S5/22 , H01S5/3434 , H01S5/1064 , H01S5/142 , H01S5/0215 , H01S5/021 , H01S5/0218 , H01S5/1032 , H01S5/2086
摘要： A method for producing a semiconductor optical device includes the steps of bonding a semiconductor chip to an SOI substrate having a waveguide, the semiconductor chip having an optical gain and including a first cladding layer, a core layer, and a second cladding layer that contain III-V group compound semiconductors and are sequentially stacked in this order, forming a covered portion with a first insulating layer on the second cladding layer, etching partway in the thickness direction the second cladding layer exposed from the first insulating film, forming a second insulating film covering from the covered portion to a part of a remaining portion of the second cladding layer, and forming a first tapered portion that is disposed on the waveguide and tapered along the extending direction of the waveguide by etching the core layer and the second cladding layer exposed from the second insulating film.
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公开(公告)号：US20210249840A1
公开(公告)日：2021-08-12
申请号：US17154652
申请日：2021-01-21
摘要： A method for producing a semiconductor optical device includes the steps of bonding a semiconductor chip to an SOI substrate having a waveguide, the semiconductor chip having an optical gain and including a first cladding layer, a core layer, and a second cladding layer that contain III-V group compound semiconductors and are sequentially stacked in this order, forming a covered portion with a first insulating layer on the second cladding layer, etching partway in the thickness direction the second cladding layer exposed from the first insulating film, forming a second insulating film covering from the covered portion to a part of a remaining portion of the second cladding layer, and forming a first tapered portion that is disposed on the waveguide and tapered along the extending direction of the waveguide by etching the core layer and the second cladding layer exposed from the second insulating film.
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公开(公告)号：US20220206226A1
公开(公告)日：2022-06-30
申请号：US17524634
申请日：2021-11-11
发明人： Takuo HIRATANI
摘要： A semiconductor optical device includes a substrate containing silicon and including terraces, a waveguide, and a diffraction grating in different regions in plan view; and a semiconductor device formed of a III-V compound semiconductor and having an optical gain, the semiconductor device being joined to the diffraction grating and the terraces and being in contact with an upper surface of the substrate. The waveguide is optically coupled to the diffraction grating in a direction in which the waveguide extends. The terraces are located on both sides of the waveguide and the diffraction grating in a direction crossing the direction in which the waveguide extends. The substrate has a groove between each of the terraces and the waveguide. The diffraction grating is continuously connected to the terraces in the direction crossing the direction in which the waveguide extends.
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公开(公告)号：US20210126428A1
公开(公告)日：2021-04-29
申请号：US17078753
申请日：2020-10-23
发明人： Naoki FUJIWARA , Hideki YAGI , Hajime SHOJI , Takuo HIRATANI , Takehiko KIKUCHI , Toshiyuki NITTA
摘要： A semiconductor optical device includes an SOI substrate having a waveguide of silicon, and at least one gain region of a group III-V compound semiconductor having an optical gain bonded to the SOI substrate. The waveguide has a bent portion and multiple linear portions extending linearly and connected to each other through the bent portion. The gain region is disposed on each of the multiple linear portions.
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公开(公告)号：US20220247155A1
公开(公告)日：2022-08-04
申请号：US17584584
申请日：2022-01-26
发明人： Takuo HIRATANI , Naoki FUJIWARA , Takehiko KIKUCHI
摘要： A semiconductor optical device includes a substrate containing silicon, and a semiconductor element bonded to the substrate, the semiconductor element being formed of a compound semiconductor and having an optical gain. The substrate includes a waveguide and a first region connected to the waveguide in an extension direction of the waveguide. The first region includes a plurality of recesses and a plurality of protrusions. Each of the plurality of recesses is recessed in a thickness direction of the substrate compared to a surface of the substrate to which the semiconductor element is bonded. Each of the plurality of protrusions protrudes in the thickness direction of the substrate from bottom surfaces of the plurality of recesses. The plurality of recesses and the plurality of protrusions are alternately disposed in a direction intersecting with the extension direction of the waveguide. The semiconductor element is bonded to the first region.
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公开(公告)号：US20210143609A1
公开(公告)日：2021-05-13
申请号：US17076411
申请日：2020-10-21
发明人： Takuo HIRATANI
摘要： A semiconductor optical device includes a substrate containing silicon and having a waveguide, a first semiconductor element including a core layer formed of III-V group compound semiconductors and being bonded to the substrate, and a second semiconductor element including a diffraction grating and being bonded to the substrate, wherein the diffraction grating has a first semiconductor layer and a second semiconductor layer burying the first semiconductor layer, the first semiconductor layer and the second semiconductor layer are formed of III-V group compound semiconductors, and the diffraction grating reflects light propagating through the waveguide.
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7.发明申请公开(公告)号：US20200326476A1
公开(公告)日：2020-10-15
申请号：US16831895
申请日：2020-03-27
发明人： Takuo HIRATANI
摘要： A semiconductor integrated optical device includes a waveguide mesa having a first multilayer including a first core layer, a second multilayer including a second core layer, and a butt joint interface between the first core layer and the second core layer; a support having first to third regions; and a buried semiconductor region provided on the support. The first multilayer has a first mesa width on the first region. The second multilayer has a second mesa width on the second region. On the third region, the second multilayer has a waveguide portion having a third mesa width smaller than the first and the second mesa widths. The second core layer has a waveguide core thickness on the second region. In the waveguide portion, the second core layer has a core portion having a thickness different from the waveguide core thickness at a position away from the butt-joint interface.
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公开(公告)号：US20230089696A1
公开(公告)日：2023-03-23
申请号：US17942612
申请日：2022-09-12
摘要： An optical filter includes a first loop mirror, a second loop mirror, a first waveguide optically coupled to the first loop mirror and the second loop mirror, a second waveguide optically coupled to the first loop mirror and the second loop mirror, a first access waveguide optically coupled to the first waveguide, a second access waveguide optically coupled to the second waveguide, and an output section, wherein the first loop mirror includes a first loop waveguide and a first multiplexer/demultiplexer, the second loop mirror includes a second loop waveguide and a second multiplexer/demultiplexer, the output section includes a third loop waveguide, a third multiplexer/demultiplexer, a third waveguide, and a fourth waveguide, the third loop waveguide optically coupled to the second loop waveguide and the third multiplexer/demultiplexer, the third waveguide and the fourth waveguide optically coupled to the third multiplexer/demultiplexer, and the output section.
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公开(公告)号：US20220158412A1
公开(公告)日：2022-05-19
申请号：US17493393
申请日：2021-10-04
发明人： Takuo HIRATANI , Hideki YAGI , Naoki FUJIWARA
摘要： A semiconductor optical device includes a substrate including a waveguide made of silicon and a semiconductor layer joined to the substrate so as to overlap the waveguide and including a diffraction grating formed of a first semiconductor layer and a second semiconductor layer having different refractive indices. The waveguide includes a bent portion and a plurality of straight portions that are connected to each other by the bent portion and that extend straight. The first semiconductor layer and the second semiconductor layer are each made of a compound semiconductor. The second semiconductor layer is embedded in the first semiconductor layer and includes a plurality of portions arranged in a direction in which the plurality of straight portions extend. The diffraction grating is positioned above the plurality of straight portions.
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公开(公告)号：US20210126424A1
公开(公告)日：2021-04-29
申请号：US17032898
申请日：2020-09-25
发明人： Yuki ITO , Takuo HIRATANI
摘要： A semiconductor laser diode includes a semiconductor substrate, a laser portion that is provided on the semiconductor substrate and has an active layer, and an optical modulation portion that is provided on the semiconductor substrate and has a light absorption layer configured to absorb laser light from the laser portion. In the semiconductor laser diode, the light absorption layer includes a first light absorption layer and a second light absorption layer. The active layer, the first light absorption layer, and the second light absorption layer are arranged in this order in a light guiding direction. The first light absorption layer has a first wavelength obtained by photoluminescence measurement, the second light absorption layer has a second wavelength obtained by photoluminescence measurement, and the second wavelength is longer than the first wavelength.
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