Ion implanter and model generation method

    公开(公告)号:US11527381B2

    公开(公告)日:2022-12-13

    申请号:US17191218

    申请日:2021-03-03

    Abstract: There is provided an ion implanter including a beam generation device that generates an ion beam, based on an implantation recipe, a plurality of measurement devices that measure at least one physical quantity of the ion beam, and a control device that acquires a data set including a plurality of measurement values measured by the plurality of measurement devices, and evaluates measurement validity of the at least one physical quantity of the ion beam by using a model representing a correlation between the plurality of measurement values.

Patent Agency Ranking