公开(公告)号：US20230038439A1

公开(公告)日：2023-02-09

申请号：US17973130

申请日：2022-10-25

Applicant: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.

Inventor： Kazuhisa Ishibashi ,  Tetsuya Kudo ,  Mikio Yamaguchi

IPC: H01J37/317 ,  H01J37/304

Abstract: An ion implanter including a beam generation device that generates an ion beam, based on an implantation recipe, a plurality of measurement devices that measure beam currents of the ion beam, and a control device. The control device acquires a data set including the beam currents and an implantation parameter in the implantation recipe, and evaluates measurement validity of the beam currents of the ion beam by using the model. The implantation parameter may be one of ion species, beam energy, a beam current, a beam size, a wafer tilt angle, a wafer twist angle and an average dose. The model may be built based on a plurality of past data sets acquired during a plurality of implantation process based on the implantation recipe.

公开(公告)号：US20230260747A1

公开(公告)日：2023-08-17

申请号：US18108420

申请日：2023-02-10

Applicant: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.

Inventor： Tetsuya Kudo

IPC: H01J37/317 ,  H01J37/147 ,  H01J37/20 ,  H01J37/304

CPC classification number: H01J37/3171 ,  H01J37/20 ,  H01J37/304 ,  H01J37/1474 ,  H01J2237/2007 ,  H01J2237/24535

Abstract: Provided is an ion implanter or the like capable of shortening a replacement time of workpieces. An ion implantation method includes (a) deflecting an ion beam by at least one of an electric field and a magnetic field in an irradiation-disabled direction in which a wafer is incapable of being irradiated with the ion beam after a first wafer is irradiated with the ion beam directed in an irradiation-enabled direction in which the wafer is capable of being irradiated with the ion beam; (b) moving the first wafer from an ion implantation position, subsequently to the step (a); (e) disposing a second wafer different from the first wafer at the ion implantation position, subsequently to the step (b); and (f) returning the ion beam from the irradiation-disabled direction to the irradiation-enabled direction, subsequently to the step (e).

公开(公告)号：US20230260741A1

公开(公告)日：2023-08-17

申请号：US18108429

申请日：2023-02-10

Applicant: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.

Inventor： Tetsuya Kudo ,  Akihiro Ochi ,  Shinji Ebisu

IPC: H01J37/20 ,  H01J37/317 ,  H01J37/147 ,  H01J37/04

CPC classification number: H01J37/20 ,  H01J37/3171 ,  H01J37/1475 ,  H01J37/045 ,  H01J2237/20214 ,  H01J2237/20228 ,  H01J2237/24564 ,  H01J2237/2007 ,  H01J37/09

Abstract: The ion implantation method includes (a) moving a wafer adjusted to have a first implantation angle with respect to an ion beam from a beam irradiation range toward a beam non-irradiation range; (b) starting a change of the wafer from the first implantation angle to a second implantation angle while the wafer is moved within the beam non-irradiation range after the wafer having the first implantation angle is moved from the beam irradiation range; (c-1) reversing a movement direction of the wafer at an end of the beam non-irradiation range and moving the wafer toward the beam irradiation range; and (c-2) completing the change of the wafer from the first implantation angle to the second implantation angle while the wafer is moved within the beam non-irradiation range before the wafer is returned to the beam irradiation range.

公开(公告)号：US11728132B2

公开(公告)日：2023-08-15

申请号：US17666952

申请日：2022-02-08

Applicant: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.

Inventor： Mikio Yamaguchi ,  Kazuhisa Ishibashi ,  Tetsuya Kudo

IPC: H01J37/304 ,  H01J37/317

CPC classification number: H01J37/304 ,  H01J37/3171

Abstract: An ion implanter includes a beam generation device that generates an ion beam with which a workpiece is irradiated, a control device that sets a plurality of operation parameters for controlling an operation of the beam generation device, a measurement device that measures at least one of beam characteristics of the ion beam, a storage device that accumulates data sets in each of which a set of set values of the plurality of operation parameters and a measurement value of the at least one of the beam characteristics of the ion beam are associated with each other, and an analysis device that generates a function for estimating the at least one of the beam characteristics from a set value of at least one of specific parameters included in the plurality of operation parameters, based on a plurality of the data sets accumulated in the storage device.

公开(公告)号：US20170040197A1

公开(公告)日：2017-02-09

申请号：US15228754

申请日：2016-08-04

Applicant: Sumitomo Heavy Industries Ion Technology Co., Ltd.

Inventor： Tetsuya Kudo ,  Shinji Ebisu ,  Yoshito Fujii

IPC: H01L21/677 ,  H01L21/68 ,  C23C14/48 ,  H01L21/67

CPC classification number: H01L21/67778 ,  C23C14/48 ,  H01J2237/184 ,  H01J2237/20207 ,  H01J2237/204 ,  H01J2237/31701 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67213 ,  H01L21/67742 ,  H01L21/67745 ,  H01L21/67748 ,  H01L21/67766 ,  H01L21/68 ,  H01L21/68764

Abstract: A first conveyance mechanism and a second conveyance mechanism convey a pair of two wafers to an alignment device from a wafer container via a buffer device, and then bring the wafers respectively into a first load lock chamber and a second load lock chamber after alignment. An intermediate conveyance mechanism conveys one of the pair of two wafers between the first load lock chamber and a vacuum processing chamber. The intermediate conveyance mechanism conveys the other of the pair of two wafers between the second load lock chamber and the vacuum processing chamber. The first conveyance mechanism and the second conveyance mechanism take out the pair of two wafers subjected to an implantation process from the first load lock chamber and the second load lock chamber and store the wafers into the wafer container.

Abstract translation: 第一传送机构和第二传送机构经由缓冲装置从晶片容器将一对两个晶片传送到对准装置，然后在对准之后将晶片分别带入第一负载锁定室和第二负载锁定室。 中间输送机构在第一负载锁定室和真空处理室之间输送一对两个晶片中的一个。 中间输送机构将两对晶片中的另一方输送到第二负载锁定室和真空处理室之间。 第一输送机构和第二输送机构从第一负载锁定室和第二负载锁定室取出经受了植入处理的一对两个晶片，并将晶片储存在晶片容器中。

公开(公告)号：US09666413B2

公开(公告)日：2017-05-30

申请号：US14740928

申请日：2015-06-16

Applicant: Sumitomo Heavy Industries Ion Technology Co., Ltd.

Inventor： Yoshito Fujii ,  Tetsuya Kudo ,  Shinji Ebisu ,  Suguru Hirokawa ,  Keiji Okada

IPC: H01J37/20 ,  H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/185 ,  H01J37/20 ,  H01J2237/202 ,  H01J2237/31701

Abstract: Provided is an ion implantation apparatus including: a vacuum processing chamber in which an ion implantation process for a wafer is performed; one or more load lock chambers that are used for bringing the wafer into the vacuum processing chamber and taking out the wafer from the vacuum processing chamber; an intermediate conveyance chamber that is disposed to be adjacent to both the vacuum processing chamber and the load lock chamber; a load lock chamber-intermediate conveyance chamber communication mechanism including a gate valve capable of sealing a load lock chamber-intermediate conveyance chamber communication port; and an intermediate conveyance chamber-vacuum processing chamber communication mechanism including a movable shielding plate capable of shielding a part or the whole of the intermediate conveyance chamber-vacuum processing chamber communication port.

公开(公告)号：US20210280388A1

公开(公告)日：2021-09-09

申请号：US17191218

申请日：2021-03-03

Applicant: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.

Inventor： Kazuhisa Ishibashi ,  Tetsuya Kudo ,  Mikio Yamaguchi

IPC: H01J37/317 ,  H01J37/304

Abstract: There is provided an ion implanter including a beam generation device that generates an ion beam, based on an implantation recipe, a plurality of measurement devices that measure at least one physical quantity of the ion beam, and a control device that acquires a data set including a plurality of measurement values measured by the plurality of measurement devices, and evaluates measurement validity of the at least one physical quantity of the ion beam by using a model representing a correlation between the plurality of measurement values.

公开(公告)号：US10468283B2

公开(公告)日：2019-11-05

申请号：US15228754

申请日：2016-08-04

Applicant: Sumitomo Heavy Industries Ion Technology Co., Ltd.

Inventor： Tetsuya Kudo ,  Shinji Ebisu ,  Yoshito Fujii

IPC: H01L21/67 ,  H01L21/677 ,  C23C14/48 ,  H01L21/68 ,  H01L21/687

Abstract: A first conveyance mechanism and a second conveyance mechanism convey a pair of two wafers to an alignment device from a wafer container via a buffer device, and then bring the wafers respectively into a first load lock chamber and a second load lock chamber after alignment. An intermediate conveyance mechanism conveys one of the pair of two wafers between the first load lock chamber and a vacuum processing chamber. The intermediate conveyance mechanism conveys the other of the pair of two wafers between the second load lock chamber and the vacuum processing chamber. The first conveyance mechanism and the second conveyance mechanism take out the pair of two wafers subjected to an implantation process from the first load lock chamber and the second load lock chamber and store the wafers into the wafer container.

公开(公告)号：US20150364299A1

公开(公告)日：2015-12-17

申请号：US14740928

申请日：2015-06-16

Applicant: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.

Inventor： Yoshito Fujii ,  Tetsuya Kudo ,  Shinji Ebisu ,  Suguru Hirokawa ,  Keiji Okada

IPC: H01J37/317 ,  H01J37/20

CPC classification number: H01J37/3171 ,  H01J37/185 ,  H01J37/20 ,  H01J2237/202 ,  H01J2237/31701

Abstract: Provided is an ion implantation apparatus including: a vacuum processing chamber in which an ion implantation process for a wafer is performed; one or more load lock chambers that are used for bringing the wafer into the vacuum processing chamber and taking out the wafer from the vacuum processing chamber; an intermediate conveyance chamber that is disposed to be adjacent to both the vacuum processing chamber and the load lock chamber; a load lock chamber-intermediate conveyance chamber communication mechanism including a gate valve capable of sealing a load lock chamber-intermediate conveyance chamber communication port; and an intermediate conveyance chamber-vacuum processing chamber communication mechanism including a movable shielding plate capable of shielding a part or the whole of the intermediate conveyance chamber-vacuum processing chamber communication port.

Abstract translation: 提供了一种离子注入装置，包括：真空处理室，其中执行晶片的离子注入工艺; 用于将晶片带入真空处理室并从真空处理室取出晶片的一个或多个负载锁定室; 设置成与真空处理室和负载锁定室相邻设置的中间输送室; 负载锁定室 - 中间输送室连通机构，包括能够密封负载锁定室 - 中间输送室连通口的闸阀; 以及中间输送室 - 真空处理室连通机构，其包括能够屏蔽中间输送室 - 真空处理室连通口的一部分或全部的可动屏蔽板。

公开(公告)号：US11823863B2

公开(公告)日：2023-11-21

申请号：US17973130

申请日：2022-10-25

Applicant: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.

Inventor： Kazuhisa Ishibashi ,  Tetsuya Kudo ,  Mikio Yamaguchi

IPC: H01J37/317 ,  H01J37/304

CPC classification number: H01J37/3171 ,  H01J37/304 ,  H01J2237/30416 ,  H01J2237/31703

Abstract: An ion implanter including a beam generation device that generates an ion beam, based on an implantation recipe, a plurality of measurement devices that measure beam currents of the ion beam, and a control device. The control device acquires a data set including the beam currents and an implantation parameter in the implantation recipe, and evaluates measurement validity of the beam currents of the ion beam by using the model. The implantation parameter may be one of ion species, beam energy, a beam current, a beam size, a wafer tilt angle, a wafer twist angle and an average dose. The model may be built based on a plurality of past data sets acquired during a plurality of implantation process based on the implantation recipe.