公开(公告)号：US20150069378A1

公开(公告)日：2015-03-12

申请号：US14170202

申请日：2014-01-31

Applicant: Samsung Display Co., Ltd.

Inventor： Myoung-Geun Cha ,  Yoon-Ho Khang ,  Hyun-Jae Na ,  Sang-Ho Park

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/127

Abstract: A thin film transistor (TFT) array substrate includes a substrate, a gate electrode, a gate line, a first data line, and a second data line on the substrate, a gate insulating layer that covers the gate electrode and the gate line and includes a first opening that exposes a portion of the first data line and a second opening that exposes a portion of the second data line, an active layer disposed on the gate insulating layer so that at least one portion of the active layer overlaps the gate electrode, a drain electrode and a source electrode that extend from opposite sides of the active layer, a pixel electrode that extends from the drain electrode, and a connection wiring that extends from the source electrode, and connects the first data line to the second data line through the first and second openings of the gate insulating layer.

Abstract translation: 薄膜晶体管（TFT）阵列基板包括在基板上的基板，栅电极，栅极线，第一数据线和第二数据线，覆盖栅电极和栅极线的栅极绝缘层， 暴露第一数据线的一部分的第一开口和暴露第二数据线的一部分的第二开口，设置在栅绝缘层上的有源层，使得有源层的至少一部分与栅电极重叠， 从有源层的相对侧延伸的漏电极和源电极，从漏极延伸的像素电极和从源电极延伸的连接布线，并且将第一数据线连接到第二数据线通过 栅极绝缘层的第一和第二开口。