LIGHT-EMITTING DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME

    公开(公告)号:US20220223814A1

    公开(公告)日:2022-07-14

    申请号:US17565702

    申请日:2021-12-30

    Abstract: Provided are a light-emitting device and an electronic apparatus including the light-emitting device. The light-emitting device includes a first electrode, a second electrode facing the first electrode, and an interlayer disposed between the first electrode and the second electrode. The interlayer includes an emission layer and at least one of an emission auxiliary layer and a buffer layer, the emission layer includes a host and a dopant, the dopant includes a first emissive compound and a second emissive compound, and the at least one of the emission auxiliary layer and the buffer layer includes a third emissive compound.

    LIGHT-EMITTING DEVICE AND AN ELECTRONIC APPARATUS COMPRISING THE SAME

    公开(公告)号:US20220216434A1

    公开(公告)日:2022-07-07

    申请号:US17558401

    申请日:2021-12-21

    Inventor: Minje KIM Mieun JUN

    Abstract: A touch sensor for a display device, includes: a light-emitting device having a first electrode, a second electrode facing the first electrode, an interlayer which is between the first electrode and the second electrode and includes an emission area, wherein the emission area includes: an emission layer including a host and a dopant; and a first layer including a first compound, wherein the host and the first compound are different materials, and a bandgap of the first compound is about 3.5 eV or more.

    LIGHT-EMITTING DEVICE AND ELECTRONIC APPARATUS

    公开(公告)号:US20210257575A1

    公开(公告)日:2021-08-19

    申请号:US17162538

    申请日:2021-01-29

    Abstract: A light-emitting device includes an emission layer that includes a host, a first dopant, and a second dopant, and an electronic apparatus includes the same. In the emission layer, a) the first dopant is a phosphorescent dopant, b) a Stokes shift of the second dopant is less than or equal to 15 nm, and c) a spectral overlap integral of an emission spectrum of the first dopant and an absorption spectrum of the second dopant may be greater than or equal to 1.5×1015 M−1 cm−1 nm4, and accordingly, the emission efficiency (for example, external quantum efficiency) and lifespan of the light-emitting device may be improved.

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