公开(公告)号：US20140377904A1

公开(公告)日：2014-12-25

申请号：US14477587

申请日：2014-09-04

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： DOO HYOUNG LEE ,  CHAN WOO YANG ,  SEUNG-HO JUNG ,  DOO NA KIM ,  BO SUNG KIM ,  EUN HYE PARK ,  JUNE WHAN CHOI

IPC: H01L29/66 ,  H01L29/786 ,  H01L21/02

CPC classification number: H01L29/66969 ,  H01B1/06 ,  H01L21/02565 ,  H01L21/02628 ,  H01L29/7869

Abstract: A thin film transistor substrate according to an exemplary embodiment of the present invention includes a semiconductor layer including metal disposed on an insulating substrate, a gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode overlapping the semiconductor layer, wherein the metal in the semiconductor layer comprises indium (In), zinc (Zn), and tin (Sn), and a molar ratio ( R , R  [ mol   % ] = [ In ] [ In + Zn + Sn ] × 100 ) of indium (In) to the metals in the semiconductor layer is less than about 20%, and more specifically, the molar ratio ( R , R  [ mol   % ] = [ In ] [ In + Zn + Sn ] × 100 ) of indium (In) of the metals in the semiconductor layer is about 5% to about 13%.

Abstract translation: 根据本发明的示例性实施例的薄膜晶体管基板包括：半导体层，包括设置在绝缘基板上的金属，与半导体层重叠的栅极电极以及与半导体层重叠的源电极和漏电极，其中金属 在半导体层中包含铟（In），锌（Zn）和锡（Sn），并且摩尔比（R，R [摩尔百分比] = [In] [In + Zn + Sn]×100） 对于半导体层中的金属，铟（In）的含量小于约20％，更具体地说，摩尔比（R，R [摩尔百分比] = [In] [In + Zn + Sn]×100 ）的半导体层中的金属的In（In）为约5％至约13％。