公开(公告)号：US20200209165A1

公开(公告)日：2020-07-02

申请号：US16709222

申请日：2019-12-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Younghoon SOHN ,  Yusin YANG ,  Chihoon LEE

IPC: G01N21/95 ,  G01N21/45 ,  H01L21/67

Abstract: Disclosed are a substrate inspection method and a method of fabricating a semiconductor device using the same. The inspection method may include measuring a target area of a substrate using a pulsed beam to obtain a first peak, measuring a near field ultrasound, which is produced by the pulsed beam in a near field region including the target area, using a first continuous wave beam different from the pulsed beam to obtain a second peak, and measuring a far field ultrasound, which is produced by the near field ultrasound in a far field region outside the near field region, using a second continuous wave beam to examine material characteristics of the substrate.