公开(公告)号：US20180158669A1

公开(公告)日：2018-06-07

申请号：US15886372

申请日：2018-02-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chan Sic Yoon ,  Ki Seok Lee ,  Dong Oh Kim ,  Yong Jae Kim

IPC: H01L21/027 ,  H01L21/02 ,  G03F1/38

CPC classification number: H01L21/027 ,  G03F1/38 ,  H01L21/02107 ,  H01L21/02697 ,  H01L27/0207 ,  H01L27/10888

Abstract: Methods for manufacturing a semiconductor device include forming a gate line extending in a first direction in a substrate, and an impurity region on a side surface of the gate line, forming an insulating film pattern on the substrate, the insulating film pattern extending in the first direction and comprising a first through-hole that is configured to expose the impurity region, forming a barrier metal layer on the first through-hole, forming a conductive line contact that fills the first through-hole and that is electrically connected to the impurity region, fowling a first mask pattern on the conductive line contact and the insulating film pattern, the first mask pattern extending in a second direction that is different from the first direction and the first mask pattern comprising a first opening, and removing corners of the barrier metal layer by partially etching the barrier metal layer.