公开(公告)号：US10985255B2

公开(公告)日：2021-04-20

申请号：US16523529

申请日：2019-07-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junghwan Huh ,  Dongchan Kim ,  Dae Hyun Kim ,  Euiju Kim ,  Jisoo Lee

IPC: H01L29/423 ,  H01L29/78 ,  H01L29/51 ,  H01L29/49

Abstract: A semiconductor device and a method of forming the same are provided. The semiconductor device includes a gate trench crossing an active region, and a gate structure in the gate trench. The gate structure includes a gate dielectric layer disposed on an inner wall of the gate trench, a gate electrode disposed on the gate electric layer and partially filling the gate trench, a gate capping insulating layer disposed on the gate electrode, and a gap-fill insulating layer disposed in the gate trench and disposed on the gate capping insulating layer. The gate capping insulating layer includes a material formed by oxidizing a portion of the gate electrode, nitriding the portion of the gate electrode, or oxidizing and nitriding the portion of the gate electrode.