公开(公告)号：US20170098622A1

公开(公告)日：2017-04-06

申请号：US15286811

申请日：2016-10-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Sik PARK ,  KYEHEE YEOM

IPC: H01L23/00 ,  H01L23/498

Abstract: A semiconductor device, a semiconductor package including the same, and a method of fabricating the same are disclosed. The method may include providing an integrated circuit on a semiconductor chip substrate; providing a first conductive pad on the substrate, the first conductive pad electrically connected to the integrated circuit chip; forming a first insulating layer on the substrate to cover the first conductive pad; forming a mask pattern on the first insulating layer, the mask pattern including an opening vertically overlapping the first conductive pad; removing a portion of the first insulating layer above the first conductive pad by performing etching using the mask pattern, thereby forming an opening in the first insulating layer; depositing an aluminum-containing conductive layer on the mask pattern, such that the mask pattern is between the first insulating layer and the aluminum-containing conductive layer, and such that the aluminum-containing conductive layer fills at least part of the opening and is connected to the first conductive pad; and patterning the aluminum-containing conductive layer to form a conductive pattern