公开(公告)号：US20190393238A1

公开(公告)日：2019-12-26

申请号：US16259086

申请日：2019-01-28

Applicant: Samsung Electronics Co., Ltd

Inventor： Geunwon LIM ,  SangJun Hong ,  Seokcheon Baek

IPC: H01L27/11582 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573 ,  H01L21/28 ,  H01L29/423 ,  H01L23/522

Abstract: A three-dimensional semiconductor memory device includes a substrate, an electrode structure including gate electrodes sequentially stacked on the substrate, a source structure between the electrode structure and the substrate, vertical semiconductor patterns passing through the electrode structure and the source structure, a data storage pattern between each of the vertical semiconductor patterns and the electrode structure, and a common source pattern between the source structure and the substrate. The common source pattern has a lower resistivity than the source structure and is connected to the vertical semiconductor patterns through the source structure.