METHOD FOR MANUFACTURING SEMICONDUCTOR MEMORY DEVICE

    公开(公告)号:US20230200059A1

    公开(公告)日:2023-06-22

    申请号:US17929270

    申请日:2022-09-01

    CPC classification number: H01L27/10897 H01L27/10814 H01L27/10894

    Abstract: A method for manufacturing a semiconductor memory device comprises providing a substrate, etching a portion of the substrate that forms a trench therein, forming an element isolation film that fills the trench and defines an active area, herein the element isolation film includes a first liner that covers an inner sidewall and a bottom surface of the trench, wherein the first liner is recessed and exposes a corner portion of the substrate, doping nitrogen into the substrate, and forming a pre-gate insulating film that extends along and on the exposed corner portion of the substrate and an upper surface of the substrate. The pre-gate insulating film includes a first portion on the upper surface of the substrate, and a second portion on the corner portion of the substrate. A thickness of the first portion is less than a thickness of the second portion.

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