公开(公告)号：US20230200059A1

公开(公告)日：2023-06-22

申请号：US17929270

申请日：2022-09-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HO KYUN AN ,  Su Min Cho ,  Bum Soo Kim ,  Ha Young Kim

IPC: H01L27/108

CPC classification number: H01L27/10897 ,  H01L27/10814 ,  H01L27/10894

Abstract: A method for manufacturing a semiconductor memory device comprises providing a substrate, etching a portion of the substrate that forms a trench therein, forming an element isolation film that fills the trench and defines an active area, herein the element isolation film includes a first liner that covers an inner sidewall and a bottom surface of the trench, wherein the first liner is recessed and exposes a corner portion of the substrate, doping nitrogen into the substrate, and forming a pre-gate insulating film that extends along and on the exposed corner portion of the substrate and an upper surface of the substrate. The pre-gate insulating film includes a first portion on the upper surface of the substrate, and a second portion on the corner portion of the substrate. A thickness of the first portion is less than a thickness of the second portion.

公开(公告)号：US12080774B2

公开(公告)日：2024-09-03

申请号：US18487177

申请日：2023-10-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ho Kyun An ,  Su Min Cho

IPC: H01L29/423 ,  H01L21/02 ,  H01L27/092 ,  H01L29/161 ,  H01L29/40 ,  H10B12/00

CPC classification number: H01L29/4236 ,  H01L21/02532 ,  H01L21/02667 ,  H01L27/092 ,  H01L29/161 ,  H01L29/401 ,  H10B12/50

Abstract: A semiconductor device includes a substrate including a first region and a second region, a first silicon-germanium film which is conformally formed inside a surface of the substrate of the first region and defines a first gate trench, a first gate insulating film which extends on the first silicon-germanium film along a profile of the first gate trench and is in physical contact with the first silicon-germanium film, a first metallic gate electrode on the first gate insulating film, a source/drain region formed inside the substrate on both sides of the first metallic gate electrode, a second gate insulating film in the second region and a second metallic gate electrode on the second gate insulating film.

公开(公告)号：US11456366B2

公开(公告)日：2022-09-27

申请号：US17335455

申请日：2021-06-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ho Kyun An ,  Su Min Cho

IPC: H01L29/161 ,  H01L27/092 ,  H01L29/423 ,  H01L29/40 ,  H01L21/02 ,  H01L27/108

Abstract: A semiconductor device includes a substrate including a first region and a second region, a first silicon-germanium film which is conformally formed inside a surface of the substrate of the first region and defines a first gate trench, a first gate insulating film which extends on the first silicon-germanium film along a profile of the first gate trench and is in physical contact with the first silicon-germanium film, a first metallic gate electrode on the first gate insulating film, a source/drain region formed inside the substrate on both sides of the first metallic gate electrode, a second gate insulating film in the second region and a second metallic gate electrode on the second gate insulating film.

公开(公告)号：US20220416038A1

公开(公告)日：2022-12-29

申请号：US17822594

申请日：2022-08-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ho Kyun An ,  Su Min Cho

IPC: H01L29/423 ,  H01L27/092 ,  H01L29/161 ,  H01L29/40 ,  H01L21/02 ,  H01L27/108

Abstract: A semiconductor device includes a substrate including a first region and a second region, a first silicon-germanium film which is conformally formed inside a surface of the substrate of the first region and defines a first gate trench, a first gate insulating film which extends on the first silicon-germanium film along a profile of the first gate trench and is in physical contact with the first silicon-germanium film, a first metallic gate electrode on the first gate insulating film, a source/drain region formed inside the substrate on both sides of the first metallic gate electrode, a second gate insulating film in the second region and a second metallic gate electrode on the second gate insulating film.

公开(公告)号：US20220115511A1

公开(公告)日：2022-04-14

申请号：US17335455

申请日：2021-06-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ho Kyun An ,  Su Min Cho

IPC: H01L29/423 ,  H01L27/092 ,  H01L29/161 ,  H01L27/108 ,  H01L21/02 ,  H01L29/40

Abstract: A semiconductor device includes a substrate including a first region and a second region, a first silicon-germanium film which is conformally formed inside a surface of the substrate of the first region and defines a first gate trench, a first gate insulating film which extends on the first silicon-germanium film along a profile of the first gate trench and is in physical contact with the first silicon-germanium film, a first metallic gate electrode on the first gate insulating film, a source/drain region formed inside the substrate on both sides of the first metallic gate electrode, a second gate insulating film in the second region and a second metallic gate electrode on the second gate insulating film.

公开(公告)号：US20240038863A1

公开(公告)日：2024-02-01

申请号：US18487177

申请日：2023-10-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ho Kyun An ,  Su Min Cho

IPC: H01L29/423 ,  H01L27/092 ,  H01L29/161 ,  H01L29/40 ,  H01L21/02 ,  H10B12/00

CPC classification number: H01L29/4236 ,  H01L27/092 ,  H01L29/161 ,  H01L29/401 ,  H01L21/02532 ,  H01L21/02667 ,  H10B12/50

Abstract: A semiconductor device includes a substrate including a first region and a second region, a first silicon-germanium film which is conformally formed inside a surface of the substrate of the first region and defines a first gate trench, a first gate insulating film which extends on the first silicon-germanium film along a profile of the first gate trench and is in physical contact with the first silicon-germanium film, a first metallic gate electrode on the first gate insulating film, a source/drain region formed inside the substrate on both sides of the first metallic gate electrode, a second gate insulating film in the second region and a second metallic gate electrode on the second gate insulating film.

公开(公告)号：US11824098B2

公开(公告)日：2023-11-21

申请号：US17822594

申请日：2022-08-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ho Kyun An ,  Su Min Cho

IPC: H01L29/423 ,  H01L27/092 ,  H01L29/161 ,  H01L29/40 ,  H01L21/02 ,  H10B12/00

CPC classification number: H01L29/4236 ,  H01L21/02532 ,  H01L21/02667 ,  H01L27/092 ,  H01L29/161 ,  H01L29/401 ,  H10B12/50

Abstract: A semiconductor device includes a substrate including a first region and a second region, a first silicon-germanium film which is conformally formed inside a surface of the substrate of the first region and defines a first gate trench, a first gate insulating film which extends on the first silicon-germanium film along a profile of the first gate trench and is in physical contact with the first silicon-germanium film, a first metallic gate electrode on the first gate insulating film, a source/drain region formed inside the substrate on both sides of the first metallic gate electrode, a second gate insulating film in the second region and a second metallic gate electrode on the second gate insulating film.