公开(公告)号：US20220246623A1

公开(公告)日：2022-08-04

申请号：US17239060

申请日：2021-04-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Inchan HWANG ,  Hwichan JUN

IPC: H01L27/11 ,  H01L23/528 ,  H01L27/092 ,  H01L21/8238

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a static random access memory (SRAM) including a plurality of transistors disposed in a first layer and a second layer. The first layer includes a first shared gate of a first transistor and a second shared gate of a second transistor, among the plurality of transistors. The second layer is disposed above the first layer and includes a third shared gate of a third transistor and a fourth shared gate of a fourth transistor, among the plurality of transistors. The third shared gate is disposed above the first shared gate, and the fourth shared gate is disposed above the second shared gate. The SRAM further includes a first shared contact, a second shared contact, a first cross-couple contact connecting the fourth shared gate and the first shared contact, and a second cross-couple contact connecting the third shared gate and the second shared contact.

公开(公告)号：US20220108981A1

公开(公告)日：2022-04-07

申请号：US17147587

申请日：2021-01-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Inchan HWANG ,  Hwichan JUN

IPC: H01L27/085 ,  H01L21/822 ,  H01L21/8234

Abstract: An array of multi-stack transistor structures is provided, wherein the multi-stack transistor structures are arranged in a plurality of rows and a plurality of columns in the array, wherein each of the multi-stack transistor structures includes two or more vertically arranged transistor stacks, and wherein a dam structure is formed between adjacent two rows in a same column so that a multi-stack transistor structure in one of the adjacent two rows is electrically isolated from a multi-stack transistor structure in the other of the adjacent two rows in the same column.