公开(公告)号：US09799607B2

公开(公告)日：2017-10-24

申请号：US15358217

申请日：2016-11-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Seung Song ,  Hyeonuk Kim

IPC: H01L21/82 ,  H01L27/02 ,  H01L23/535 ,  H01L27/088 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/417

CPC classification number: H01L23/535 ,  H01L21/823475 ,  H01L21/823871 ,  H01L27/0207 ,  H01L27/088 ,  H01L27/092 ,  H01L29/41725 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a first gate electrode provided in a jumper region of a substrate and extending in a first direction, first source/drain regions provided at both sides of the first gate electrode, and a connecting contact electrically connecting the first gate electrode and the first source/drain regions to each other. The connecting contact includes first sub-contacts disposed at both sides of the first gate electrode and connected to the first source/drain regions, and a second sub-contact extending in a second direction intersecting the first direction. The second sub-contact is connected to the first sub-contacts and is in contact with a top surface of the first gate electrode. In the first direction, each of the first sub-contacts has a first width and the second sub-contact has a second width smaller than the first width.