公开(公告)号：US20230095830A1

公开(公告)日：2023-03-30

申请号：US17834240

申请日：2022-06-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyo-Jin KIM ,  Daewon HA

IPC: H01L29/78 ,  H01L29/417

Abstract: Disclosed are three-dimensional semiconductor device and their fabrication methods. The device includes a first active region on a substrate and including a first source/drain pattern and a first channel pattern connected to the first source/drain pattern, a first active contact on the first source/drain pattern, a second active region on the first active region and the first active contact and including a second source/drain pattern and a second channel pattern connected to the second source/drain pattern, a second active contact on the second source/drain pattern, a gate electrode that vertically extends from the first channel pattern toward the second channel pattern, a first power line and a second power line that are below the first active region, and a first metal layer on the gate electrode and the second active contact.