公开(公告)号：US20130307026A1

公开(公告)日：2013-11-21

申请号：US13752766

申请日：2013-01-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sun-kyu HWANG ,  Jai-kwang SHIN ,  Hyuk-soon CHOI ,  Jong-seob KIM ,  Jae-joon OH ,  Jong-bong HA ,  In-jun HWANG ,  Kyoung-yeon KIM

IPC: H01L29/778 ,  H01L29/66

CPC classification number: H01L29/778 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7787

Abstract: According to example embodiments, High electron mobility transistors (HEMTs) may include a discontinuation region in a channel region. The discontinuation region may include a plurality of 2DEG unit regions that are spaced apart from one another. The discontinuation region may be formed at an interface between two semiconductor layers or adjacent to the interface. The discontinuation region may be formed by an uneven structure or a plurality of recess regions or a plurality of ion implantation regions. The plurality of 2DEG unit regions may have a nanoscale structure. The plurality of 2DEG unit regions may be formed in a dot pattern, a stripe pattern, or a staggered pattern.

Abstract translation: 根据示例实施例，高电子迁移率晶体管（HEMT）可以包括沟道区域中的不连续区域。 不连续区域可以包括彼此间隔开的多个2DEG单元区域。 不连续区域可以形成在两个半导体层之间或与界面相邻的界面处。 不连续区域可以由不平坦结构或多个凹陷区域或多个离子注入区域形成。 多个2DEG单元区域可以具有纳米尺度结构。 多个2DEG单元区域可以形成为点图案，条纹图案或交错图案。