公开(公告)号：US11094624B2

公开(公告)日：2021-08-17

申请号：US16596074

申请日：2019-10-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shaofeng Ding ,  Jeonghoon Ahn

IPC: H01L23/522 ,  H01L23/532 ,  H01L23/00 ,  H01L49/02 ,  H01L21/768

Abstract: A semiconductor device includes a first electrode disposed on a substrate. A capacitor dielectric layer is on the first electrode. A second electrode is on the capacitor dielectric layer. A first insulating layer is on the first and second electrodes and the capacitor dielectric layer. A first interconnection structure is on the first insulating layer and connected to the first electrode. A second interconnection structure is on the first insulating layer and connected to the second electrode. A second insulating layer is on the first and second interconnection structures. A plurality of connection structures are configured to pass through the second insulating layer and be connected to the first and second interconnection structures. Each of the first and second interconnection structures has an aluminum layer.