TRANSISTORS AND METHODS OF MANUFACTURING THE SAME
    11.
    发明申请
    TRANSISTORS AND METHODS OF MANUFACTURING THE SAME 有权
    晶体管及其制造方法

    公开(公告)号:US20140021446A1

    公开(公告)日:2014-01-23

    申请号:US13792525

    申请日:2013-03-11

    Abstract: Transistors, and methods of manufacturing the transistors, include graphene and a material converted from graphene. The transistor may include a channel layer including graphene and a gate insulating layer including a material converted from graphene. The material converted from the graphene may be fluorinated graphene. The channel layer may include a patterned graphene region. The patterned graphene region may be defined by a region converted from graphene. A gate of the transistor may include graphene.

    Abstract translation: 晶体管和制造晶体管的方法包括石墨烯和从石墨烯转化的材料。 晶体管可以包括包括石墨烯的沟道层和包括从石墨烯转换的材料的栅极绝缘层。 从石墨烯转化的材料可以是氟化石墨烯。 沟道层可以包括图案化的石墨烯区域。 图案化的石墨烯区域可以由从石墨烯转换的区域限定。 晶体管的栅极可以包括石墨烯。

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