公开(公告)号：US20130316525A1

公开(公告)日：2013-11-28

申请号：US13770709

申请日：2013-02-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HyeokJun Son ,  Sangjin Hyun ,  Sangbom Kang ,  SungKee Han ,  Sughun Hong ,  Hyung-seok Hong

IPC: H01L21/8238

CPC classification number: H01L21/823857

Abstract: A semiconductor device including a selectively nitrided gate insulating layer may be fabricated by a method that includes forming a first gate insulating layer on a substrate having a first region and a second region, performing a nitridation process on the first gate insulating layer, removing the first gate insulating layer from at least a portion of the first region to expose at least a portion of the substrate, forming a second gate insulating layer on at least the exposed portion of the first region of the substrate, thermally treating the first and second gate insulating layers in an oxygen atmosphere, forming a high-k dielectric on the first and second gate insulating layers, and forming a metal gate electrode on the high-k dielectric.

Abstract translation: 可以通过包括在具有第一区域和第二区域的衬底上形成第一栅极绝缘层的方法来制造包括选择性氮化栅极绝缘层的半导体器件，在第一栅极绝缘层上进行氮化处理，去除第一栅极绝缘层 栅极绝缘层，以从第一区域的至少一部分露出至少一部分基板，在至少基板的第一区域的暴露部分上形成第二栅极绝缘层，热处理第一和第二栅极绝缘层 层，在第一和第二栅极绝缘层上形成高k电介质，并在高k电介质上形成金属栅电极。