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公开(公告)号:US20220290048A1
公开(公告)日:2022-09-15
申请号:US17689061
申请日:2022-03-08
Inventor: Eun Joo JANG , Kwanghee KIM , Seungjin Lee , Ted Sargent
Abstract: A quantum dot device, a method of manufacturing the same, a thin film having a multilayered structure, and an electronic device including the same. The quantum dot device includes a first electrode and a second electrode, a quantum dot layer disposed between the first electrode and the second electrode, and a hole transport layer disposed between the quantum dot layer and the first electrode, wherein the hole transport layer includes a first hole transport layer including a three-dimensional structure perovskite thin film and a second hole transport layer including a two-dimensional structure perovskite thin film.
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公开(公告)号:US20190260948A1
公开(公告)日:2019-08-22
申请号:US16403741
申请日:2019-05-06
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yunhwan Jung , Sunyool Kang , Kyoungmin Koh , Seungjin Lee
Abstract: An image sensor includes first pixels and second pixels arranged in alternating order along a first direction, first output lines extending in a second direction that is perpendicular to the first direction and respectively connected to the first pixels, second output lines extending in the second direction and respectively connected to the second pixels, first analog circuit blocks and second analog circuit blocks arranged in alternating order along the first direction, and shielding structures disposed each between adjacent ones of the first and second analog circuit blocks. Each of the first analog circuit blocks includes a plurality of first analog circuits respectively connected to the first output lines. Each of the second analog circuit blocks includes a plurality of second analog circuits respectively connected to the second output lines.
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