公开(公告)号：US20140281286A1

公开(公告)日：2014-09-18

申请号：US14185143

申请日：2014-02-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sun-Young LIM

IPC: G06F12/14

CPC classification number: G06F12/145 ,  G06F12/1027 ,  G06F2212/651

Abstract: A memory system is provided, which includes a real memory space and a virtual memory space. The memory system includes a memory device having a first memory space which is accessed using a first memory address and a second memory space which is accessed using a second memory address, and a memory controller configured to control access to the memory device; wherein the memory controller is configured to translate the first memory address into the second memory address mapped thereto in response to a request for access to the first memory space, access the second memory space using the translated second memory address, and access the second memory space using the non-translated second memory address, in response to a request for access to the second memory space.

Abstract translation: 提供了一种存储器系统，其包括实际存储器空间和虚拟存储器空间。 存储器系统包括具有使用第一存储器地址访问的第一存储器空间和使用第二存储器地址访问的第二存储器空间的存储器件，以及被配置为控制对存储器件的访问的存储器控​​制器; 其中所述存储器控制器被配置为响应于访问所述第一存储器空间的请求将所述第一存储器地址转换为映射到其的所述第二存储器地址，使用所转换的第二存储器地址访问所述第二存储器空间，以及访问所述第二存储器空间 响应于访问第二存储器空间的请求，使用非翻译的第二存储器地址。