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公开(公告)号:US20220302053A1
公开(公告)日:2022-09-22
申请号:US17528954
申请日:2021-11-17
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yukyung Park , Ungcheon Kim , Wonil Lee
IPC: H01L23/00 , H01L23/498 , H01L23/544 , H01L25/10 , H01L25/18 , H01L21/48
Abstract: An interposer according to an embodiment of the present invention includes a base layer having opposite first and second surfaces, a wiring structure on the first surface of the base layer, an interposer protective layer disposed on the second surface of the base layer and having a pad recess with a lower surface of the interposer protective layer positioned at a first vertical level and a bottom surface of the pad recess positioned at a second vertical level that is higher than the first vertical level, an interposer pad of which a portion fills the pad recess of the interposer protective layer and the remaining portion protrudes from the interposer protective layer, and an interposer through electrode extending through the base layer and the interposer protective layer to the interposer pad, the interposer through electrode electrically connecting the wiring structure to the interposer pad.
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12.
公开(公告)号:US20210175161A1
公开(公告)日:2021-06-10
申请号:US17038306
申请日:2020-09-30
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yukyung Park , Ungcheon Kim , Sungwoo Park , Seungkwan Ryu
IPC: H01L23/498 , H01L25/18 , H01L21/48 , H01L23/538
Abstract: Provided is an interposer for a semiconductor package, the interposer including an interposer substrate comprising a first main surface and a second main surface opposite to the first main surface, a first through-electrode structure and a second through-electrode structure each passing through the interposer substrate and protruding from the first main surface, a connection terminal structure contacting both the first through-electrode structure and the second through-electrode structure, and a photosensitive polymer layer arranged between the connection terminal structure and the interposer substrate, and between the first through-electrode structure and the second through-electrode structure.
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