公开(公告)号：US12272630B2

公开(公告)日：2025-04-08

申请号：US18347519

申请日：2023-07-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ungcheon Kim ,  Sungwoo Park ,  Yukyung Park ,  Seungkwan Ryu

IPC: H01L23/498 ,  H01L21/48 ,  H01L25/18

Abstract: An interposer including a base layer, a redistribution structure on a first surface of the base layer and including a conductive redistribution pattern, a first lower protection layer on a second surface of the base layer, a lower conductive pad on the first lower protection layer, a through electrode connecting the conductive redistribution pattern and the lower conductive pad, a second lower protection layer on the first lower protection layer, including a different material than the first lower protection layer, and contacting at least a portion of the lower conductive pad, and an indentation formed in an outer edge region of the interposer to provide a continuous angled sidewall extending entirely through the second lower protection layer and through at least a portion of the first protection layer.

公开(公告)号：US11984415B2

公开(公告)日：2024-05-14

申请号：US17528954

申请日：2021-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yukyung Park ,  Ungcheon Kim ,  Wonil Lee

IPC: H01L23/498 ,  H01L21/48 ,  H01L23/00 ,  H01L23/544 ,  H01L25/10 ,  H01L25/18 ,  H01L23/48

CPC classification number: H01L24/02 ,  H01L21/486 ,  H01L23/49838 ,  H01L23/544 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L25/105 ,  H01L25/18 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/04 ,  H01L2223/54426 ,  H01L2224/0213 ,  H01L2224/02141 ,  H01L2224/02145 ,  H01L2224/0215 ,  H01L2224/03019 ,  H01L2224/03462 ,  H01L2224/0401 ,  H01L2224/05019 ,  H01L2224/05025 ,  H01L2224/05082 ,  H01L2224/0603 ,  H01L2224/06182

Abstract: An interposer according to an embodiment of the present invention includes a base layer having opposite first and second surfaces, a wiring structure on the first surface of the base layer, an interposer protective layer disposed on the second surface of the base layer and having a pad recess with a lower surface of the interposer protective layer positioned at a first vertical level and a bottom surface of the pad recess positioned at a second vertical level that is higher than the first vertical level, an interposer pad of which a portion fills the pad recess of the interposer protective layer and the remaining portion protrudes from the interposer protective layer, and an interposer through electrode extending through the base layer and the interposer protective layer to the interposer pad, the interposer through electrode electrically connecting the wiring structure to the interposer pad.

公开(公告)号：US11195785B2

公开(公告)日：2021-12-07

申请号：US16891443

申请日：2020-06-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yukyung Park ,  Seungkwan Ryu ,  Yunseok Choi

IPC: H01L23/12 ,  H01L23/14 ,  H01L23/48 ,  H01L21/00 ,  H01L21/44 ,  H01L23/498 ,  H01L23/31 ,  H01L23/538 ,  H01L23/00 ,  H01L21/768 ,  H01L21/48 ,  H01L23/532

Abstract: An interposer includes a base layer having a first surface and a second surface, a redistribution structure on the first surface, an interposer protection layer on the second surface, a pad wiring layer on the interposer protection layer, an interposer through electrode passing through the base layer and the interposer protection layer and electrically connecting the redistribution structure to the pad wiring layer, an interposer connection terminal attached to the pad wiring layer, and a wiring protection layer including a first portion covering a portion of the interposer protection layer adjacent to the pad wiring layer, a second portion covering a portion of a top surface of the pad wiring layer, and a third portion covering a side surface of the pad wiring layer. The third portion is disposed between the first portion and the second portion. The first to third portions have thicknesses different from each other.

公开(公告)号：US20210167001A1

公开(公告)日：2021-06-03

申请号：US16891443

申请日：2020-06-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yukyung Park ,  Seungkwan Ryu ,  Yunseok Choi

IPC: H01L23/498 ,  H01L23/538 ,  H01L23/31

Abstract: An interposer includes a base layer having a first surface and a second surface, a redistribution structure on the first surface, an interposer protection layer on the second surface, a pad wiring layer on the interposer protection layer, an interposer through electrode passing through the base layer and the interposer protection layer and electrically connecting the redistribution structure to the pad wiring layer, an interposer connection terminal attached to the pad wiring layer, and a wiring protection layer including a first portion covering a portion of the interposer protection layer adjacent to the pad wiring layer, a second portion covering a portion of a top surface of the pad wiring layer, and a third portion covering a side surface of the pad wiring layer. The third portion is disposed between the first portion and the second portion. The first to third portions have thicknesses different from each other.

公开(公告)号：US11728255B2

公开(公告)日：2023-08-15

申请号：US17154067

申请日：2021-01-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ungcheon Kim ,  Sungwoo Park ,  Yukyung Park ,  Seungkwan Ryu

IPC: H01L23/498 ,  H01L21/48 ,  H01L25/18

CPC classification number: H01L23/49822 ,  H01L21/4857 ,  H01L23/49816 ,  H01L23/49838 ,  H01L25/18

Abstract: An interposer including a base layer, a redistribution structure on a first surface of the base layer and including a conductive redistribution pattern, a first lower protection layer on a second surface of the base layer, a lower conductive pad on the first lower protection layer, a through electrode connecting the conductive redistribution pattern and the lower conductive pad, a second lower protection layer on the first lower protection layer, including a different material than the first lower protection layer, and contacting at least a portion of the lower conductive pad, and an indentation formed in an outer edge region of the interposer to provide a continuous angled sidewall extending entirely through the second lower protection layer and through at least a portion of the first protection layer.

公开(公告)号：US11482483B2

公开(公告)日：2022-10-25

申请号：US17038306

申请日：2020-09-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yukyung Park ,  Ungcheon Kim ,  Sungwoo Park ,  Seungkwan Ryu

IPC: H01L23/498 ,  H01L23/538 ,  H01L25/18 ,  H01L21/48 ,  H01L23/544

Abstract: Provided is an interposer for a semiconductor package, the interposer including an interposer substrate comprising a first main surface and a second main surface opposite to the first main surface, a first through-electrode structure and a second through-electrode structure each passing through the interposer substrate and protruding from the first main surface, a connection terminal structure contacting both the first through-electrode structure and the second through-electrode structure, and a photosensitive polymer layer arranged between the connection terminal structure and the interposer substrate, and between the first through-electrode structure and the second through-electrode structure.

公开(公告)号：US12218043B2

公开(公告)日：2025-02-04

申请号：US17971321

申请日：2022-10-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yukyung Park ,  Ungcheon Kim ,  Sungwoo Park ,  Seungkwan Ryu

IPC: H01L23/498 ,  H01L21/48 ,  H01L23/538 ,  H01L25/18 ,  H01L23/544

Abstract: Provided is an interposer for a semiconductor package, the interposer including an interposer substrate comprising a first main surface and a second main surface opposite to the first main surface, a first through-electrode structure and a second through-electrode structure each passing through the interposer substrate and protruding from the first main surface, a connection terminal structure contacting both the first through-electrode structure and the second through-electrode structure, and a photosensitive polymer layer arranged between the connection terminal structure and the interposer substrate, and between the first through-electrode structure and the second through-electrode structure.

公开(公告)号：US12142573B2

公开(公告)日：2024-11-12

申请号：US18244350

申请日：2023-09-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yukyung Park ,  Minseung Yoon ,  Yunseok Choi

IPC: H01L23/52 ,  H01L23/367 ,  H01L23/498 ,  H01L23/538

Abstract: An interposer includes a base layer including a first surface and a second surface that are opposite to each other. An interconnect structure is disposed on the first surface. The interconnect structure includes a metal interconnect pattern and an insulating layer surrounding the metal interconnect pattern. A first lower protection layer is disposed on the second surface. A plurality of lower conductive pads is disposed on the first lower protection layer. A plurality of through electrodes penetrates the base layer and the first lower protection layer. The plurality of through electrodes electrically connects the metal interconnect pattern of the interconnect structure to the lower conductive pads. At least one of the insulating layer and the first lower protection layer has compressive stress. A thickness of the first lower protection layer is in a range of about 13% to about 30% of a thickness of the insulating layer.

公开(公告)号：US11784131B2

公开(公告)日：2023-10-10

申请号：US17163988

申请日：2021-02-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yukyung Park ,  Minseung Yoon ,  Yunseok Choi

IPC: H01L23/52 ,  H01L23/538 ,  H01L23/498 ,  H01L23/367

CPC classification number: H01L23/5386 ,  H01L23/3675 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/5383

Abstract: An interposer includes a base layer including a first surface and a second surface that are opposite to each other. An interconnect structure is disposed on the first surface. The interconnect structure includes a metal interconnect pattern and an insulating layer surrounding the metal interconnect pattern. A first lower protection layer is disposed on the second surface. A plurality of lower conductive pads is disposed on the first lower protection layer. A plurality of through electrodes penetrates the base layer and the first lower protection layer. The plurality of through electrodes electrically connects the metal interconnect pattern of the interconnect structure to the lower conductive pads. At least one of the insulating layer and the first lower protection layer has compressive stress. A thickness of the first lower protection layer is in a range of about 13% to about 30% of a thickness of the insulating layer.

公开(公告)号：US20230066895A1

公开(公告)日：2023-03-02

申请号：US17856122

申请日：2022-07-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yukyung Park ,  Hyunjung Song ,  Eunkyoung Choi

IPC: H01F17/00 ,  H01L23/522 ,  H01L23/528 ,  H01L23/498 ,  H01L21/56

Abstract: An inductor includes a semiconductor substrate provided with a plurality of wiring levels including a first wiring level and a second wiring level, a straight conductive line, at the first wiring level of the semiconductor substrate, having a first end, a conductive coil of a spiral pattern, at the second wiring level over the first wiring level, having a second end, and a conductive via vertically connecting the first end of the straight conductive line to the second end of the conductive coil. When viewed in a plan view, a plurality of dummy patterns are arranged in a first area defined by an innermost turn of the spiral pattern.