公开(公告)号：US11881497B2

公开(公告)日：2024-01-23

申请号：US17409842

申请日：2021-08-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Gu Jin ,  Young Chan Kim

IPC: H01L27/146 ,  H04N25/75 ,  H04N25/77

CPC classification number: H01L27/14643 ,  H01L27/14636 ,  H04N25/75 ,  H04N25/77

Abstract: An image sensor, which stores electric charge overflowing from a photoelectric conversion layer, includes: (1) a substrate including a first surface and a second surface, which is opposite to the first surface and upon which light is incident, (2) a photoelectric conversion layer in the substrate, (3) an isolation film disposed on the substrate, along the photoelectric conversion layer, (4) a storage conductive pattern disposed in the isolation film, (5) a transfer gate disposed on a first surface of the substrate, (6) a first impurity-injected area disposed between the photoelectric conversion layer and the isolation film, and (7) a second impurity-injected area disposed on the first surface of the substrate and connected to the transfer gate. The first and second impurity-injected areas are electrically connected.