公开(公告)号：US20250016992A1

公开(公告)日：2025-01-09

申请号：US18763801

申请日：2024-07-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Juho Lee ,  Mintae Ryu ,  Youngseok Park ,  Seongjae Byeon ,  Younggeun Song

IPC: H10B12/00

Abstract: A semiconductor memory device includes a substrate, a conductive line disposed on the substrate, a horizontal channel portion extending in a first direction on the conductive line and partially covering the conductive line, a separation insulating layer disposed on the horizontal channel portion, a gate insulating layer including a first portion on the conductive line and a second portion that extends in a second direction that is perpendicular to the substrate, a vertical channel portion between the gate insulating layer and the separation insulating layer, the vertical channel portion extending in the second direction, and a spacer on the first portion of the gate insulating layer. A first material included in the horizontal channel portion is different from a second material included in the vertical channel portion.

公开(公告)号：US10581000B2

公开(公告)日：2020-03-03

申请号：US14859815

申请日：2015-09-21

Applicant: Samsung Electronics Co., Ltd. ,  Samsung SDI Co., Ltd.

Inventor： Soonok Jeon ,  Sangmo Kim ,  Joonghyuk Kim ,  Youngseok Park ,  Youngmok Son ,  Yeonsook Chung ,  Yongsik Jung

IPC: H01L51/00 ,  C07D409/14 ,  C09K11/02 ,  C09K11/06 ,  H01L51/50

Abstract: A condensed cyclic compound represented by Formula 1: wherein in Formula 1, groups X1 to X3 and X11 to X18 are the same as described in the specification.

公开(公告)号：US10240085B2

公开(公告)日：2019-03-26

申请号：US15245545

申请日：2016-08-24

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Samsung SDI Co., Ltd.

Inventor： Sooghang Ihn ,  Dalho Huh ,  Namheon Lee ,  Jhunmo Son ,  Hosuk Kang ,  Sangmo Kim ,  Jongsoo Kim ,  Joonghyuk Kim ,  Hyunjung Kim ,  Youngmok Son ,  Myungsun Sim ,  Yeonsook Chung ,  Youngseok Park ,  Yongsik Jung

IPC: H01L51/50 ,  C09K11/06 ,  C09K11/02 ,  H05B33/14 ,  H01L51/00

Abstract: A thin film including a combination of a donor compound and an acceptor compound, and a phosphorescent dopant, wherein the donor compound and the acceptor compound form an exciplex having characteristics described in the specification.