Abstract:
An apparatus includes a non-metallic interlayer between a magnetic data storage layer and a heat sink layer, wherein interface thermal resistance between the interlayer and the heat sink layer is capable of reducing heat flow between the heat sink layer and the magnetic data storage layer. The apparatus may be configured as a thin film structure arranged for data storage. The apparatus may also include thermal resistor layer positioned between the interlayer and the heat sink layer.
Abstract:
An apparatus includes a non-metallic interlayer between a magnetic data storage layer and a heat sink layer, wherein interface thermal resistance between the interlayer and the heat sink layer is capable of reducing heat flow between the heat sink layer and the magnetic data storage layer. The apparatus may be configured as a thin film structure arranged for data storage. The apparatus may also include thermal resistor layer positioned between the interlayer and the heat sink layer.
Abstract:
A stack includes a substrate and a magnetic recording layer. Disposed between the substrate and magnetic recording layer is an MgO—Ti(ON) layer.
Abstract:
A magnetic stack includes a interlayer structure and a magnetic recording layer disposed over the interlayer in the magnetic stack. The magnetic recording layer includes substantially ordered L10, oriented crystalline magnetic grains laterally separated by a nonmagnetic, segregant material. The interlayer structure comprises a first layer having cubic crystal structure including oriented crystalline grains and a second layer having crystalline grains laterally separated by a segregant material. The crystalline grains of the second layer are arranged in substantially vertically contiguous alignment with the crystalline grains of the first layer and the segregant material of the magnetic recording layer is arranged in substantially vertically contiguous alignment with the segregant material of the second layer.
Abstract:
In some embodiments, a thermally assisted data recording medium has a recording layer formed of iron (Fe), platinum (Pt) and a transition metal T selected from a group consisting of Rhodium (Rh), Ruthenium (Ru), Osmium (Os) and Iridium (Ir) to substitute for a portion of the Pt content as FeYPtY-XTX with Y in the range of from about 20 at % to about 80 at % and X in the range of from about 0 at % to about 20 at %.
Abstract:
A stack includes a substrate, a magnetic recording layer comprising FePtX disposed over the substrate, and a capping layer disposed on the magnetic recording layer. The capping layer comprises Co; at least one rare earth element; one or more elements selected from a group consisting of Fe and Pt; and an amorphizing agent comprising one to three elements selected from a group consisting of B, Zr, Ta, Cr, Nb, W, V, and Mo.
Abstract:
A stack includes a substrate and a magnetic recording layer. Disposed between the substrate and magnetic recording layer is an MgO—Ti(ON) layer.
Abstract:
In some embodiments, a thermally assisted data recording medium has a recording layer formed of iron (Fe), platinum (Pt) and a transition metal T selected from a group consisting of Rhodium (Rh), Ruthenium (Ru), Osmium (Os) and Iridium (Ir) to substitute for a portion of the Pt content as FeYPtY-XTX with Y in the range of from about 20 at % to about 80 at % and X in the range of from about 0 at % to about 20 at %.
Abstract:
The embodiments disclose a stack feature of a stack configured to confine optical fields within and to a patterned plasmonic underlayer in the stack configured to guide light from a light source to regulate optical coupling.
Abstract:
A data device may have at least a magnetic lamination with a thermal retention structure deposited on a substrate and configured to maintain a predetermined temperature for a predetermined amount of time. Such predetermined temperature and amount of time may allow for the growth of a magnetic layer with a predetermined magnetic anisotropy.