公开(公告)号：US20160164028A1

公开(公告)日：2016-06-09

申请号：US15010808

申请日：2016-01-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masayuki SAKAKURA ,  Hiromichi GODO ,  Kaoru TSUCHIYA

IPC: H01L51/52 ,  H01L27/32

CPC classification number: H01L51/5246 ,  H01L23/564 ,  H01L27/124 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3276 ,  H01L33/44 ,  H01L51/5237 ,  H01L2227/323 ,  H01L2251/5323 ,  H05B33/04 ,  H05B33/14 ,  Y10T428/24777

Abstract: A novel display device with higher reliability having a structure of blocking moisture and oxygen, which deteriorate the characteristics of the display device, from penetrating through a sealing region and a method of manufacturing thereof is provided. According to the present invention, a display device and a method of manufacturing the same comprising: a display portion formed by aligning a light-emitting element using an organic light-emitting material between a pair of substrate, wherein the display portion is formed on an insulating layer formed on any one of the substrates, the pair of substrates is bonded to each other with a sealing material formed over the insulating layer while surrounding a periphery of the display portion, at least one layer of the insulating layer is made of an organic resin material, the periphery has a first region and a second region, the insulating layer in the first region has an opening covered with a protective film, the sealing material is formed in contact with the opening and the protective film, an outer edge portion of the insulating layer in the second region is covered with the protective film or the sealing material.

公开(公告)号：US20130334319A1

公开(公告)日：2013-12-19

申请号：US13970814

申请日：2013-08-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kaoru TSUCHIYA

IPC: G06K19/07

CPC classification number: G06K19/0723 ,  G06K19/07749

Abstract: A semiconductor device that is resistant to bending stress and has a structure in which an antenna circuit, an electric double layer capacitor for storing electricity, and the like are formed over a signal processing circuit that is provided over a substrate and has a charging circuit. The signal processing circuit having the charging circuit is provided over a substrate, and the antenna circuit and the electric double layer capacitor are provided over the signal processing circuit. The antenna circuit is electrically connected to the signal processing circuit, and the electric double layer capacitor is electrically connected to the charging circuit. With such a structure, a wiring for connecting the charging circuit and the electric double layer capacitor can be made short. Accordingly, a semiconductor device that is resistant to bending stress can be provided.

Abstract translation: 具有抗弯曲应力的半导体装置，具有在基板上设置有充电电路的信号处理电路上形成天线电路，用于蓄电的双电层电容器等的结构。 具有充电电路的信号处理电路设置在基板上，天线电路和双电层电容器设置在信号处理电路上。 天线电路与信号处理电路电连接，双电层电容器与充电电路电连接。 通过这样的结构，可以缩短用于连接充电电路和双电层电容器的布线。 因此，可以提供耐弯曲应力的半导体器件。