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公开(公告)号:US20240274627A1
公开(公告)日:2024-08-15
申请号:US18644613
申请日:2024-04-24
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Takahiro FUKUTOME , Hiromichi GODO
IPC: H01L27/146 , G01J1/42 , G01K13/00 , G06F18/214 , G06N3/04 , G06N3/08 , G06V10/147 , G06V10/44 , G06V10/82 , G06V10/94 , G06V20/68 , H04N25/75 , H04N25/77
CPC classification number: H01L27/14612 , G06F18/214 , G06N3/04 , G06N3/08 , G06V10/147 , G06V10/454 , G06V10/82 , G06V10/95 , H04N25/75 , H04N25/77 , G01J1/42 , G01K13/00 , G06V20/68
Abstract: Environmental information is managed by a neural network.
An image detection module includes a first neural network, a first communication module, a first position sensor, a first processor, and a passive element. The first neural network includes an imaging device. The imaging device has a function of obtaining an image, and the first position sensor has a function of detecting positional information on where the image is obtained. When the first neural network determines whether the image has learned features, the first processor can transmit the positional information on where the image is obtained. The first processor receives a detection result through the first communication module, and the first processor can operate the passive element in accordance with the detection result.-
公开(公告)号:US20240237374A9
公开(公告)日:2024-07-11
申请号:US18278199
申请日:2022-02-24
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Hiromichi GODO , Yoshiyuki KUROKAWA , Kouhei TOYOTAKA , Kazuki TSUDA , Satoru OHSHITA , Hidefumi RIKIMARU
IPC: H10K39/34 , G06F3/01 , G09G3/3208 , H10K59/65
CPC classification number: H10K39/34 , G06F3/013 , G09G3/3208 , H10K59/65 , G09G2330/021 , G09G2354/00 , G09G2360/14
Abstract: An electronic device having an eye tracking function is provided. The electronic device includes a display device and an optical system. The display device includes a first light-emitting element, a second light-emitting element, a sensor portion, and a driver circuit portion. The sensor portion includes a light-receiving element. The first light-emitting element has a function of emitting infrared light or visible light. The second light-emitting element has a function of emitting light of a color different from that of light emitted from the first light-emitting element. When the first light-emitting element emits infrared light, the light-receiving element has a function of detecting the infrared light that is emitted from the first light-emitting element and reflected by an eyeball of a user. When the first light-emitting element emits visible light, the light-receiving element has a function of detecting the visible light that is emitted from the first light-emitting element and reflected by the eyeball of the user. The first light-emitting element and the second light-emitting element are placed in one layer. The layer where the first light-emitting element and the second light-emitting element are positioned overlaps with the sensor portion.
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公开(公告)号:US20240231756A9
公开(公告)日:2024-07-11
申请号:US18278451
申请日:2022-02-24
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Yoshiyuki KUROKAWA , Hiromichi GODO , Kazuki TSUDA , Satoru OHSHITA , Hidefumi RIKIMARU
IPC: G06F7/523 , G06F7/50 , G09G3/3208 , G11C11/405 , H10B12/00 , H10K59/121
CPC classification number: G06F7/523 , G06F7/50 , G09G3/3208 , G11C11/405 , H10B12/00 , H10K59/1213 , H10K59/1216
Abstract: A semiconductor device with a novel structure is provided. The semiconductor device includes a cell array performing a product-sum operation of a first layer and a product-sum operation of a second layer in an artificial neural network, a first circuit from which first data is input to the cell array, and a second circuit to which second data is output from the cell array. The cell array includes a plurality of cells. The cell array includes a first region and a second region. In a first period, the first region is supplied with the t-th (t is a natural number greater than or equal to 2) first data from the first circuit and outputs the t-th second data according to the product-sum operation of the first layer to the second circuit. In the first period, the second region is supplied with the (t+1)-th first data from the first circuit and outputs the (t+1)-th second data according to the product-sum operation of the second layer to the first circuit.
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公开(公告)号:US20230352090A1
公开(公告)日:2023-11-02
申请号:US17791326
申请日:2020-12-28
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Kazuki TSUDA , Hiromichi GODO , Satoru OHSHITA , Hitoshi KUNITAKE , Satoru OKAMOTO
IPC: G11C16/04 , H01L29/786 , H01L23/528 , H10B43/10 , H10B43/35 , H10B43/27
CPC classification number: G11C16/0483 , H01L29/7869 , H01L23/5283 , H10B43/10 , H10B43/35 , H10B43/27
Abstract: A highly reliable memory device is provided. The memory device includes a first conductor, a second conductor above the first conductor, a third conductor above the second conductor, a fourth conductor above the third conductor, a fifth conductor above the fourth conductor, a sixth conductor above the fifth conductor, a seventh conductor, a first insulator, a second insulator, a first semiconductor, and a second semiconductor. At least third conductor and the fourth conductor have an opening. The first insulator, the first semiconductor, the second insulator, and the second semiconductor are provided in this order on an inner surface of the opening. The seventh conductor is provided between the first semiconductor and the second insulator in a region between the third conductor and the second insulator. The first semiconductor is electrically connected to the second conductor and the fifth conductor. The second semiconductor is electrically connected to the first conductor and the sixth conductor.
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公开(公告)号:US20210150241A1
公开(公告)日:2021-05-20
申请号:US16612241
申请日:2018-05-10
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Takahiro Fukutome , Hiromichi GODO
IPC: G06K9/20 , G06K9/62 , H04N5/378 , H04N5/3745 , H01L27/146 , G06N3/04 , G06N3/08
Abstract: Environmental information is managed by a neural network.
An image detection module includes a first neural network, a first communication module, a first position sensor, a first processor, and a passive element. The first neural network includes an imaging device. The imaging device has a function of obtaining an image, and the first position sensor has a function of detecting positional information on where the image is obtained. When the first neural network determines whether the image has learned features, the first processor can transmit the positional information on where the image is obtained. The first processor receives a detection result through the first communication module, and the first processor can operate the passive element in accordance with the detection result.-
公开(公告)号:US20190221896A1
公开(公告)日:2019-07-18
申请号:US16360065
申请日:2019-03-21
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Junpei MOMO , Kazutaka KURIKI , Hiromichi GODO , Shunpei YAMAZAKI
IPC: H01M10/46 , H02J50/20 , H01M10/0562 , H01L27/12 , H01M10/613 , H01M10/623 , A61N1/378 , G06F1/16 , H02J7/02 , H01L29/786 , H01M10/0525 , H01M10/0585 , H01M10/42 , H01M10/052 , H01L27/06 , H01L21/822
CPC classification number: H01M10/46 , A61N1/378 , G06F1/163 , H01L21/8221 , H01L27/0688 , H01L27/1218 , H01L27/1225 , H01L27/124 , H01L27/1251 , H01L29/78651 , H01L29/7869 , H01M10/052 , H01M10/0525 , H01M10/0562 , H01M10/0585 , H01M10/425 , H01M10/613 , H01M10/623 , H01M2220/30 , H01M2300/0071 , H02J7/025 , H02J50/20
Abstract: A semiconductor device in which a circuit and a battery are efficiently stored is provided. In the semiconductor device, a first transistor, a second transistor, and a secondary battery are provided over one substrate. A channel region of the second transistor includes an oxide semiconductor. The secondary battery includes a solid electrolyte, and can be fabricated by a semiconductor manufacturing process. The substrate may be a semiconductor substrate or a flexible substrate. The secondary battery has a function of being wirelessly charged.
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公开(公告)号:US20170213833A1
公开(公告)日:2017-07-27
申请号:US15407695
申请日:2017-01-17
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Hiromichi GODO , Tatsunori INOUE
IPC: H01L27/108 , H01L27/11 , H01L29/786 , H01L23/528 , H01L27/13
CPC classification number: H01L27/10802 , H01L23/528 , H01L27/10814 , H01L27/1108 , H01L27/11582 , H01L27/13 , H01L28/00 , H01L29/78648 , H01L29/7869
Abstract: To provide a semiconductor device with large storage capacity and low power consumption. The semiconductor device includes an oxide semiconductor, a first transistor, a second transistor, and a dummy word line. A channel formation region in the first transistor and a channel formation region in the second transistor are formed in different regions in the oxide semiconductor. The dummy word line is provided to extend between the channel formation region in the first transistor and the channel formation region in the second transistor. By applying a predetermined potential to the dummy word line, the first transistor and the second transistor are electrically isolated in a region of the oxide semiconductor which intersects the dummy word line.
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公开(公告)号:US20170141351A1
公开(公告)日:2017-05-18
申请号:US15360564
申请日:2016-11-23
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Masayuki SAKAKURA , Hiromichi GODO , Karou TSUCHIYA
CPC classification number: H01L51/5246 , H01L23/564 , H01L27/124 , H01L27/3246 , H01L27/3258 , H01L27/3262 , H01L27/3276 , H01L33/44 , H01L51/5237 , H01L2227/323 , H01L2251/5323 , H05B33/04 , H05B33/14 , Y10T428/24777
Abstract: A novel display device with higher reliability having a structure of blocking moisture and oxygen, which deteriorate the characteristics of the display device, from penetrating through a sealing region and a method of manufacturing thereof is provided. According to the present invention, a display device and a method of manufacturing the same comprising: a display portion formed by aligning a light-emitting element using an organic light-emitting material between a pair of substrate, wherein the display portion is formed on an insulating layer formed on any one of the substrates, the pair of substrates is bonded to each other with a sealing material formed over the insulating layer while surrounding a periphery of the display portion, at least one layer of the insulating layer is made of an organic resin material, the periphery has a first region and a second region, the insulating layer in the first region has an opening covered with a protective film, the sealing material is formed in contact with the opening and the protective film, an outer edge portion of the insulating layer in the second region is covered with the protective film or the sealing material.
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公开(公告)号:US20160164028A1
公开(公告)日:2016-06-09
申请号:US15010808
申请日:2016-01-29
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Masayuki SAKAKURA , Hiromichi GODO , Kaoru TSUCHIYA
CPC classification number: H01L51/5246 , H01L23/564 , H01L27/124 , H01L27/3246 , H01L27/3258 , H01L27/3262 , H01L27/3276 , H01L33/44 , H01L51/5237 , H01L2227/323 , H01L2251/5323 , H05B33/04 , H05B33/14 , Y10T428/24777
Abstract: A novel display device with higher reliability having a structure of blocking moisture and oxygen, which deteriorate the characteristics of the display device, from penetrating through a sealing region and a method of manufacturing thereof is provided. According to the present invention, a display device and a method of manufacturing the same comprising: a display portion formed by aligning a light-emitting element using an organic light-emitting material between a pair of substrate, wherein the display portion is formed on an insulating layer formed on any one of the substrates, the pair of substrates is bonded to each other with a sealing material formed over the insulating layer while surrounding a periphery of the display portion, at least one layer of the insulating layer is made of an organic resin material, the periphery has a first region and a second region, the insulating layer in the first region has an opening covered with a protective film, the sealing material is formed in contact with the opening and the protective film, an outer edge portion of the insulating layer in the second region is covered with the protective film or the sealing material.
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公开(公告)号:US20150214383A1
公开(公告)日:2015-07-30
申请号:US14679144
申请日:2015-04-06
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Hiromichi GODO , Kengo AKIMOTO , Shunpei YAMAZAKI
IPC: H01L29/786 , H01L29/24
CPC classification number: H01L29/78693 , H01L21/02554 , H01L21/02565 , H01L21/02573 , H01L21/02631 , H01L29/24 , H01L29/66742 , H01L29/78606 , H01L29/7869 , H01L29/78696
Abstract: An object is to reduce to reduce variation in threshold voltage to stabilize electric characteristics of thin film transistors each using an oxide semiconductor layer. An object is to reduce an off current. The thin film transistor using an oxide semiconductor layer is formed by stacking an oxide semiconductor layer containing insulating oxide over the oxide semiconductor layer so that the oxide semiconductor layer and source and drain electrode layers are in contact with each other with the oxide semiconductor layer containing insulating oxide interposed therebetween; whereby, variation in threshold voltage of the thin film transistors can be reduced and thus the electric characteristics can be stabilized. Further, an off current can be reduced.
Abstract translation: 目的是为了减小阈值电压的变化,以稳定每个使用氧化物半导体层的薄膜晶体管的电特性。 目的是减少关断电流。 使用氧化物半导体层的薄膜晶体管通过在氧化物半导体层上层叠含有绝缘氧化物的氧化物半导体层而形成,使得氧化物半导体层和源极和漏极电极层彼此接触,氧化物半导体层包含绝缘体 介于其间的氧化物; 从而可以减小薄膜晶体管的阈值电压的变化,从而能够稳定电特性。 此外,可以减少截止电流。
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