公开(公告)号：US06468926B1

公开(公告)日：2002-10-22

申请号：US09342057

申请日：1999-06-29

申请人： Kiyoshi Irino ,  Ken-ichi Hikazutani ,  Tatsuya Kawamura ,  Taro Sugizaki ,  Satoshi Ohkubo ,  Toshiro Nakanishi ,  Kanetake Takasaki

发明人： Kiyoshi Irino ,  Ken-ichi Hikazutani ,  Tatsuya Kawamura ,  Taro Sugizaki ,  Satoshi Ohkubo ,  Toshiro Nakanishi ,  Kanetake Takasaki

IPC分类号： H01L2131

CPC分类号： H01L21/0214 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02312 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/3144 ,  H01L21/31662

摘要： A manufacture method for a semiconductor device includes the steps of: (a) transporting a silicon wafer into a reaction chamber having first and second gas introducing inlet ports; (b) introducing an oxidizing atmosphere via the first gas introducing inlet port and raising the temperature of the silicon wafer to an oxidation temperature; (c) introducing a wet oxidizing atmosphere to form a thermal oxide film on the surface of the silicon wafer; (d) purging gas in the reaction chamber by using inert gas to lower a residual water concentration to about 1000 ppm or lower; and (e) introducing an NO or N2O containing atmosphere into the reaction chamber via the second gas introducing inlet port while the silicon wafer is maintained above 700° C. and above the oxidation temperature, to introduce nitrogen into the thermal oxide film and form an oxynitride film. A thin oxynitride film can be manufactured with good mass productivity.

摘要翻译： 半导体器件的制造方法包括以下步骤：（a）将硅晶片输送到具有第一和第二气体引入入口的反应室中; （b）经由第一气体导入口引入氧化气氛，将硅晶片的温度升高至氧化温度; （c）引入湿氧化气氛以在硅晶片的表面上形成热氧化膜; （d）通过使用惰性气体将残留水浓度降低至约1000ppm或更低，在反应室中吹扫气体; 和（e）在硅晶片保持在700℃以上并高于氧化温度的同时，经由第二气体导入口将NO或N 2 O的气氛引入反应室，将氮引入热氧化膜中，形成 氧氮化物膜。 可以以良好的质量生产率制造薄氧氮化物膜。