公开(公告)号：US09171737B2

公开(公告)日：2015-10-27

申请号：US13824028

申请日：2011-10-06

申请人： Hiroyuki Takahashi ,  Kazuhiko Yoshida

发明人： Hiroyuki Takahashi ,  Kazuhiko Yoshida

IPC分类号： H01L21/316 ,  H01L21/02

CPC分类号： H01L21/31662 ,  H01L21/02238 ,  H01L21/02255

摘要： Disclosed is a method of forming a thermal oxide film on a silicon single crystal wafer, which includes throwing the silicon single wafer into a heat treatment furnace; elevating temperature of the heat treatment furnace up to a temperature T1 where a thermal oxide film is formed to form a thermal oxide film having a thickness d1; subsequently lowering the temperature of the heat treatment furnace down to a temperature lower than the temperature T1; and thereafter elevating the temperature of the heat treatment furnace up to a temperature T2 higher than the temperature T1 to additionally form a thermal oxide film having a thickness d2 thicker than the thickness d1. Thus, there is provided a thermal oxide film formation method to suppress occurrence of slip dislocation and/or crack of the silicon single wafer during formation of the thermal oxide film.

摘要翻译： 公开了在硅单晶晶片上形成热氧化膜的方法，其包括将硅单晶片投掷到热处理炉中; 将热处理炉的升温至达到形成热氧化膜的温度T1，形成厚度为d1的热氧化膜; 随后将热处理炉的温度降低到低于温度T1的温度; 然后将热处理炉的温度升高到高于温度T1的温度T2，以另外形成厚度d2厚于厚度d1的热氧化膜。 因此，提供了一种热氧化膜形成方法，以在形成热氧化膜期间抑制硅单晶片的滑移位错和/或裂纹的发生。

公开(公告)号：US08580034B2

公开(公告)日：2013-11-12

申请号：US11393737

申请日：2006-03-31

申请人： Gert Leusink

发明人： Gert Leusink

IPC分类号： C30B21/02

CPC分类号： H01L21/3185 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02326 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02664 ,  H01L21/3143 ,  H01L21/31662

摘要： A method of forming a semiconductor device includes providing a substrate in a vacuum processing tool, the substrate having a strained Ge-containing layer on the substrate and a Si layer on the strained Ge-containing layer, maintaining the substrate at a temperature less than 700° C., and generating a soft plasma in the vacuum processing tool. The Si layer is exposed to the soft plasma to form a Si-containing dielectric layer while minimizing oxidation and strain relaxation in the underlying strained Ge-containing layer. A semiconductor device containing a substrate, a strained Ge-containing layer on the substrate, and an Si-containing dielectric layer formed on the strained Ge-containing layer is provided. The semiconductor device can further contain a gate electrode layer on the Si-containing dielectric layer or a high-k layer on the Si-containing dielectric layer and a gate electrode layer on the high-k layer.

摘要翻译： 形成半导体器件的方法包括在真空处理工具中提供衬底，所述衬底在衬底上具有应变的Ge含有层，并且在应变的含Ge层上形成Si层，将衬底保持在低于700℃的温度 ℃，并在真空处理工具中产生软等离子体。 Si层暴露于软质等离子体以形成含Si介电层，同时使下层的应变Ge含量层中的氧化和应变弛豫最小化。 提供了一种包含衬底，在衬底上的应变Ge含有层和形成在应变Ge含有层上的含Si电介质层的半导体器件。 半导体器件还可以在含Si电介质层上的栅电极层或含Si介质层上的高k层和高k层上的栅电极层中包含栅电极层。

公开(公告)号：US08409353B2

公开(公告)日：2013-04-02

申请号：US13277385

申请日：2011-10-20

申请人： Yoshitaka Yokota ,  Sundar Ramamurthy ,  Vedapuram Achutharaman ,  Cory Czarnik ,  Mehran Behdjat ,  Christopher Olsen

发明人： Yoshitaka Yokota ,  Sundar Ramamurthy ,  Vedapuram Achutharaman ,  Cory Czarnik ,  Mehran Behdjat ,  Christopher Olsen

IPC分类号： C23C16/00

CPC分类号： H01L21/67115 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/31658 ,  H01L21/31662 ,  H01L21/67109

摘要： A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator is capable of producing a stream of least 70% ozone. The ozone passes into an RTP chamber through a water-cooled injector projecting into the chamber. Other gases such as hydrogen to increase oxidation rate, diluent gas such as nitrogen or O2, enter the chamber through another inlet. The chamber is maintained at a low pressure below 20 Torr and the substrate is advantageously maintained at a temperature less than 800° C. Alternatively, the oxidation may be performed in an LPCVD chamber including a pedestal heater and a showerhead gas injector in opposition to the pedestal.

摘要翻译： 一种用于半导体集成电路中用于氧化材料的方法和装置，例如用于氧化硅以形成电介质栅极。 臭氧发生器能够产生至少70％的臭氧流。 臭氧通过水冷却的注射器进入室内， 其他气体如氢气以提高氧化速率，稀释气体如氮气或O2通过另一个入口进入腔室。 该室保持在低于20托的低压，并且有利地将基底保持在低于800℃的温度。或者，氧化可以在包括基座加热器和喷头气体喷射器的LPCVD室中执行， 座。

公开(公告)号：US08227356B2

公开(公告)日：2012-07-24

申请号：US13219147

申请日：2011-08-26

申请人： Kouichi Muraoka

发明人： Kouichi Muraoka

IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L21/314

CPC分类号： H01L29/513 ,  H01L21/28167 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28211 ,  H01L21/3144 ,  H01L21/31604 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31662 ,  H01L21/3185 ,  H01L29/517 ,  H01L29/518

摘要： The present invention provides a semiconductor device having an improved silicon oxide film as a gate insulation film of a Metal Insulator Semiconductor structure and a method of making the same.

摘要翻译： 本发明提供一种具有改进的氧化硅膜作为金属绝缘体半导体结构的栅极绝缘膜的半导体器件及其制造方法。

公开(公告)号：US08153534B2

公开(公告)日：2012-04-10

申请号：US13025738

申请日：2011-02-11

申请人： Hisashi Inoue ,  Masataka Toiya ,  Yoshikatsu Mizuno

发明人： Hisashi Inoue ,  Masataka Toiya ,  Yoshikatsu Mizuno

IPC分类号： H01L21/31

CPC分类号： C23C8/10 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662 ,  H01L21/67109

摘要： An oxidation method for performing direct oxidation includes respectively supplying an oxidizing gas and a deoxidizing gas to the process field, and directly oxidizing a surface target substrates by use of oxygen radicals and hydroxyl group radicals generated by a reaction between the oxidizing gas and the deoxidizing gas. The oxidizing gas is supplied through an oxidizing gas nozzle extending over a vertical length corresponding to the process field and is spouted from a plurality of gas spouting holes formed on the oxidizing gas nozzle and arrayed over the vertical length corresponding to the process field. The deoxidizing gas is supplied through a plurality of deoxidizing gas nozzles having different heights respectively corresponding to a plurality of zones of the process field arrayed vertically and is spouted from gas spouting holes respectively formed on the deoxidizing gas nozzles each at height of a corresponding zone.

摘要翻译： 用于进行直接氧化的氧化方法包括分别向工艺场提供氧化气体和脱氧气体，并且通过氧化气体和脱氧气体之间的反应产生的氧自由基和羟基自由基来直接氧化表面目标衬底 。 氧化气体通过在对应于处理场的垂直长度上延伸的氧化气体喷嘴供给，并且从形成在氧化气体喷嘴上的多个气体喷出孔喷出并排列在对应于过程场的垂直长度上。 脱氧气体通过分别对应于垂直排列的处理场的多个区域的不同高度的多个脱氧气体喷嘴供给，并且从分别形成在对应区域的高度的脱氧气体喷嘴上的气体喷出孔喷出。

公开(公告)号：US08124181B2

公开(公告)日：2012-02-28

申请号：US11907968

申请日：2007-10-18

申请人： Kazuhide Hasebe ,  Takehiko Fujita ,  Shigeru Nakajima ,  Jun Ogawa

发明人： Kazuhide Hasebe ,  Takehiko Fujita ,  Shigeru Nakajima ,  Jun Ogawa

IPC分类号： C23C16/40

CPC分类号： H01L21/67109 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662

摘要： An oxidation method includes supplying oxidizing and deoxidizing gases to a process field by spouting the gases in lateral directions respectively from first and second groups of gas spouting holes. Each group of holes is disposed adjacent to target substrates on one side of the process field and arrayed over a length corresponding to the process field in a vertical direction. Gases are exhausted through an exhaust port disposed opposite to the first and second groups of gas spouting holes with the process field interposed therebetween and present over a length corresponding to the process field in the vertical direction. This causes the gases to flow along the surfaces of the target substrates, thus forming gas flows parallel with the target substrates. The process field is heated by a heater disposed around the process container to generate oxygen radicals and hydroxyl group radicals within the process field.

摘要翻译： 氧化方法包括通过分别从第一和第二组气体喷射孔喷射气体在横向方向向工艺场提供氧化和脱氧气体。 每组孔与过程场一侧的目标衬底相邻设置，并且在垂直方向上排列在对应于过程场的长度上。 气体通过与第一和第二组气体喷射孔相对设置的排气口排出，其中过程场介于它们之间并且在垂直方向上存在超过对应于过程场的长度。 这使得气体沿着目标基板的表面流动，从而形成与目标基板平行的气体流。 工艺场由设置在加工容器周围的加热器加热，以在工艺场内产生氧自由基和羟基自由基。

公开(公告)号：US08043871B2

公开(公告)日：2011-10-25

申请号：US12921492

申请日：2009-03-24

申请人： Tsuyoshi Ohtsuki ,  Satoshi Tobe ,  Yasushi Mizusawa

发明人： Tsuyoshi Ohtsuki ,  Satoshi Tobe ,  Yasushi Mizusawa

IPC分类号： H01L21/66

CPC分类号： H01L21/02238 ,  H01L21/02255 ,  H01L21/31662 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a method for forming an oxide film on a silicon wafer, comprising: measuring surface roughness of the silicon wafer and/or crystallinity in a surface layer portion of the silicon wafer in advance; adjusting oxidizing conditions for the silicon wafer based on the measurement value; and forming the oxide film on the silicon wafer under the adjusted oxidizing conditions. As a result, there can be provided the method for forming an oxide film by which the oxidizing conditions can be adjusted based on a state of the surface and/or the surface layer of the silicon wafer before forming the oxide film and even an ultrathin oxide film can be thereby accurately formed.

摘要翻译： 本发明提供一种在硅晶片上形成氧化膜的方法，包括：预先测量硅晶片的表面层部分中的硅晶片的表面粗糙度和/或结晶度; 基于测量值调整硅晶片的氧化条件; 以及在调整好的氧化条件下在硅晶片上形成氧化膜。 结果，可以提供形成氧化膜的方法，其可以在形成氧化膜之前甚至基于硅晶片的表面和/或表面层的状态以及甚至超薄氧化物来调节氧化条件 因此可以精确地形成膜。

公开(公告)号：US08021988B2

公开(公告)日：2011-09-20

申请号：US12106532

申请日：2008-04-21

申请人： Kouichi Muraoka

发明人： Kouichi Muraoka

IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L21/314

CPC分类号： H01L29/513 ,  H01L21/28167 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28211 ,  H01L21/3144 ,  H01L21/31604 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31662 ,  H01L21/3185 ,  H01L29/517 ,  H01L29/518

摘要： The present invention provides a semiconductor device having an improved silicon oxide film as a gate insulation film of a Metal Insulator Semiconductor structure and a method of making the same.

摘要翻译： 本发明提供一种具有改进的氧化硅膜作为金属绝缘体半导体结构的栅极绝缘膜的半导体器件及其制造方法。

公开(公告)号：US20110217850A1

公开(公告)日：2011-09-08

申请号：US13110613

申请日：2011-05-18

申请人： RAJESH MANI ,  NORMAN TAM ,  TIMOTHY W. WEIDMAN ,  YOSHITAKA YOKOTA

发明人： RAJESH MANI ,  NORMAN TAM ,  TIMOTHY W. WEIDMAN ,  YOSHITAKA YOKOTA

IPC分类号： H01L21/314

CPC分类号： H01L21/31662 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02244 ,  H01L21/02252 ,  H01L21/28273 ,  H01L21/31683 ,  H01L21/32105

摘要： Methods of fabricating an oxide layer on a semiconductor substrate are provided herein. The oxide layer may be formed over an entire structure disposed on the substrate, or selectively formed on a non-metal containing layer with little or no oxidation of an exposed metal-containing layer. The methods disclosed herein may be performed in a variety of process chambers, including but not limited to decoupled plasma oxidation chambers, rapid and/or remote plasma oxidation chambers, and/or plasma immersion ion implantation chambers. In some embodiments, a method may include providing a substrate comprising a metal-containing layer and non-metal containing layer; and forming an oxide layer on an exposed surface of the non-metal containing layer by exposing the substrate to a plasma formed from a process gas comprising a hydrogen-containing gas, an oxygen-containing gas, and at least one of a supplemental oxygen-containing gas or a nitrogen-containing gas.

摘要翻译： 本文提供了在半导体衬底上制造氧化物层的方法。 氧化物层可以形成在设置在基板上的整个结构上，或者选择性地形成在非金属含有层上，具有暴露的含金属层的很少或没有氧化。 本文公开的方法可以在各种处理室中执行，包括但不限于去耦等离子体氧化室，快速和/或远程等离子体氧化室和/或等离子体浸入离子注入室。 在一些实施方案中，方法可以包括提供包含含金属层和不含金属的层的基材; 以及通过将衬底暴露于由包含含氢气体，含氧气体和至少一种补充氧气的工艺气体形成的等离子体而在非含金属层的暴露表面上形成氧化物层， 含有气体或含氮气体。

公开(公告)号：US08008154B2

公开(公告)日：2011-08-30

申请号：US12188482

申请日：2008-08-08

申请人： Young-Jin Noh ,  Bon-Young Koo ,  Si-Young Choi ,  Ki-Hyun Hwang ,  Chul-Sung Kim ,  Sung-Kweon Baek ,  Jin-Hwa Heo

发明人： Young-Jin Noh ,  Bon-Young Koo ,  Si-Young Choi ,  Ki-Hyun Hwang ,  Chul-Sung Kim ,  Sung-Kweon Baek ,  Jin-Hwa Heo

IPC分类号： H01L21/336

CPC分类号： H01L29/42324 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/28273 ,  H01L21/3145 ,  H01L21/31662

摘要： Methods of forming an insulating film include forming an insulating film on a substrate. A first impurity is injected into the insulating film using a thermal process under a first set of processing conditions to form a first impurity concentration peak in a lower portion of the insulating film. A second impurity is injected into the insulating film using the thermal process under a second set of processing conditions, different from the first set of processing conditions, to form a second impurity concentration peak in an upper portion of the insulating film. Injecting the first impurity and injecting the second impurity may be carried out without using plasma and the first impurity concentration peak may be higher than the second impurity concentration peak.

摘要翻译： 形成绝缘膜的方法包括在基板上形成绝缘膜。 使用第一组处理条件下的热处理将第一杂质注入绝缘膜，以在绝缘膜的下部形成第一杂质浓度峰。 在与第一组处理条件不同的第二组处理条件下，使用热处理将第二杂质注入到绝缘膜中，以在绝缘膜的上部形成第二杂质浓度峰。 注入第一杂质并注入第二杂质可以在不使用等离子体的情况下进行，并且第一杂质浓度峰可以高于第二杂质浓度峰。