公开(公告)号：US10784781B2

公开(公告)日：2020-09-22

申请号：US15938482

申请日：2018-03-28

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chu Fu Chen ,  Chi-Feng Huang ,  Chia-Chung Chen ,  Chin-Lung Chen ,  Victor Chiang Liang ,  Chia-Cheng Pao

IPC: H02M3/158 ,  H01L29/78 ,  H01L29/423 ,  H01L21/84 ,  H01L29/80 ,  H01L29/08 ,  H01L29/66

Abstract: A transistor includes a gate structure over a substrate, wherein the substrate includes a channel region under the gate structure. The transistor further includes a source in the substrate adjacent a first side of the gate structure. The transistor further includes a drain in the substrate adjacent a second side of the gate structure, wherein the second side of the gate structure is opposite the first side of the gate structure. The transistor further includes a first lightly doped drain (LDD) region adjacent the source. The transistor further includes a second LDD region adjacent the drain. The transistor further includes a doping extension region adjacent the first LDD region.