CPP-type magnetoresistive element including a rear bias structure and lower shields with inclined magnetizations
    11.
    发明授权
    CPP-type magnetoresistive element including a rear bias structure and lower shields with inclined magnetizations 有权
    CPP型磁阻元件包括后偏置结构和具有倾斜磁化的下屏蔽

    公开(公告)号:US08891208B2

    公开(公告)日:2014-11-18

    申请号:US13853927

    申请日:2013-03-29

    Abstract: An MR element suppressing a false writing into a medium with an MR part has a CPP structure. The MR part includes a nonmagnetic intermediate layer and first and second ferromagnetic layers so as to interpose the nonmagnetic intermediate layer. First and second shield layers respectively have an inclining magnetization structure of which a magnetization is inclined with regard to a track width direction. The first and second ferromagnetic layers are respectively, magnetically coupled with the first and second shield layers. A magnetization direction adjustment layer for adjusting at least a magnetization direction of the first ferromagnetic layer is positioned at a rear end surface side of the first ferromagnetic layer, which is opposite to a front end surface receiving a magnetic field detected in the MR part.

    Abstract translation: 抑制对具有MR部件的介质的错误写入的MR元件具有CPP结构。 MR部分包括非磁性中间层和第一和第二铁磁层,以便插入非磁性中间层。 第一和第二屏蔽层分别具有磁化相对于磁道宽度方向倾斜的倾斜磁化结构。 第一和第二铁磁层分别与第一和第二屏蔽层磁耦合。 用于调节至少第一铁磁层的磁化方向的磁化方向调整层位于与在MR部分中检测到的磁场接收的前端面相反的第一铁磁性层的后端面侧。

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