公开(公告)号：US07531833B2

公开(公告)日：2009-05-12

申请号：US11257409

申请日：2005-10-12

申请人： Chang Yeon Kim ,  Tae Joon Ahn

发明人： Chang Yeon Kim ,  Tae Joon Ahn

IPC分类号： H01L29/08

CPC分类号： H01L27/3253 ,  H01L27/3246 ,  H01L51/56

摘要： An organic electro luminescence device and a fabrication method thereof are provided. An array element is formed on a first substrate and an electro luminescent diode is formed on a second substrate. The array element and the electro luminescent diode are electrically connected together by a spacer. A separator divides a sub pixel into a first region and a second region. In the electro luminescent diode, an anode electrode is formed over the first and second regions. An organic electro luminescent layer and a cathode electrode are formed on the anode electrode of one of the first and second regions.

摘要翻译： 提供一种有机电致发光器件及其制造方法。 在第一基板上形成阵列元件，在第二基板上形成电致发光二极管。 阵列元件和电致发光二极管通过间隔物电连接在一起。 分离器将子像素划分为第一区域和第二区域。 在电致发光二极管中，在第一和第二区域上形成阳极电极。 在第一和第二区域之一的阳极上形成有机电致发光层和阴极电极。

公开(公告)号：US07525125B2

公开(公告)日：2009-04-28

申请号：US11643968

申请日：2006-12-22

申请人： Tae Joon Ahn ,  Hong Koo Lee

发明人： Tae Joon Ahn ,  Hong Koo Lee

IPC分类号： H01L29/786

CPC分类号： H01L51/0545 ,  H01L27/3244 ,  H01L51/0558

摘要： A thin film transistor includes a semiconductor pattern on a substrate, a gate insulating film to cover the semiconductor pattern, a gate electrode partially overlapping the semiconductor pattern with the gate insulating film there between, a hole in the gate electrode to expose the gate insulating film, an interlayer insulating film to cover the gate electrode, and a source electrode and a drain electrode contacting the semiconductor pattern through the interlayer insulating layer and the gate insulating layer, wherein the semiconductor pattern includes at least two channels between the source electrode and the drain electrode, the at least two channels having a region with a varying width.

摘要翻译： 薄膜晶体管包括在基板上的半导体图形，覆盖半导体图案的栅极绝缘膜，与其间的栅极绝缘膜部分地与半导体图案重叠的栅电极，栅电极中的孔以露出栅极绝缘膜 ，覆盖栅电极的层间绝缘膜，以及通过层间绝缘层和栅极绝缘层与半导体图案接触的源电极和漏电极，其中，所述半导体图案在源电极和漏极之间包括至少两个沟道 所述至少两个通道具有具有变化宽度的区域。