公开(公告)号：US10515861B2

公开(公告)日：2019-12-24

申请号：US15940357

申请日：2018-03-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Fen Chen ,  Tsung-Ying Liu ,  Yeh-Hsun Fang ,  Bang-Yu Huang ,  Chui-Ya Peng

IPC: H01L21/02 ,  H01L21/66 ,  C30B29/06 ,  C30B25/16 ,  C23C16/02 ,  H01L21/306 ,  C23C16/52 ,  C23C16/24

Abstract: In a method for semiconductor processing, a semiconductor substrate is provided. The semiconductor substrate defines at least one first trench therein. The at least one first trench has a first depth (d1). A coating layer is deposited onto the semiconductor substrate using at least one precursor under a setting for a processing temperature (T). The coating layer defines at least one second trench having a second depth (d2) above the at least one first trench. A depth parameter (t) the second depth (d2) relative to the first depth (d1) is determined. The processing temperature (T) is then determined based on a pre-determined standard reference curve comprising a plurality of references depth parameters in a first range as a function of a plurality of reference processing temperatures in a second range.