公开(公告)号：US20160240651A1

公开(公告)日：2016-08-18

申请号：US14622180

申请日：2015-02-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Kai-Hsuan LEE ,  Cheng-Yu YANG ,  Hsiang-Ku SHEN ,  Han-Ting TSAI ,  Yimin HUANG

IPC: H01L29/78 ,  H01L21/02 ,  H01L29/161 ,  H01L29/36 ,  H01L29/66 ,  H01L29/49

CPC classification number: H01L29/785 ,  H01L21/0223 ,  H01L21/3065 ,  H01L21/76224 ,  H01L29/161 ,  H01L29/165 ,  H01L29/36 ,  H01L29/495 ,  H01L29/66431 ,  H01L29/66795 ,  H01L29/802

Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device structure also includes a gate stack over a portion of the fin structure, and the fin structure includes an intermediate portion under the gate stack and upper portions besides the intermediate portion. The semiconductor device structure further includes a contact layer over the fin structure. The contact layer includes a metal material, and the upper portions of the fin structure also include the metal material.

Abstract translation: 提供半导体器件结构的结构和形成方法。 半导体器件结构包括在半导体衬底上的半导体衬底和鳍状结构。 半导体器件结构还包括在鳍结构的一部分上的栅极堆叠，并且鳍结构包括在栅叠层下方的中间部分和除了中间部分之外的上部。 半导体器件结构还包括在鳍结构上的接触层。 接触层包括金属材料，翅片结构的上部还包括金属材料。