公开(公告)号：US20190155140A1

公开(公告)日：2019-05-23

申请号：US15967159

申请日：2018-04-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Hsin-Chang LEE ,  Ping-Hsun LIN ,  Yen-Cheng HO ,  Chih-Cheng LIN ,  Chia-Jen CHEN

IPC: G03F1/24 ,  G03F1/52 ,  G03F1/54 ,  G03F1/68

Abstract: A method of fabricating a photomask includes selectively exposing portions of a photomask blank to radiation to change an optical property of the portions of the photomask blank exposed to the radiation, thereby forming a pattern of exposed portions of the photomask blank and unexposed portions of the photomask blank. The pattern corresponds to a pattern of semiconductor device features.