公开(公告)号：US20110177458A1

公开(公告)日：2011-07-21

申请号：US13007238

申请日：2011-01-14

申请人： Toshiya KOTANI ,  Kazuya Fukuhara ,  Michiya Takimoto ,  Hidefumi Mukai ,  Soichi Inoue

发明人： Toshiya KOTANI ,  Kazuya Fukuhara ,  Michiya Takimoto ,  Hidefumi Mukai ,  Soichi Inoue

IPC分类号： G03F7/20 ,  G06F17/50

CPC分类号： G03F7/70425 ,  G03F7/70558

摘要： According to one embodiment, a deviation amount distribution of a two-dimensional shape parameter between a mask pattern formed on a mask and a desired mask pattern is acquired as a mask pattern map. Such that a deviation amount of the two-dimensional shape parameter between a pattern on substrate formed when the mask is subjected to exposure shot to form a pattern on a substrate and a desired pattern on substrate fits within a predetermined range, an exposure is determined for each position in the exposure shot in forming the pattern on substrate based on the mask pattern map.

摘要翻译： 根据一个实施例，获取形成在掩模上的掩模图案与期望的掩模图案之间的二维形状参数的偏差量分布作为掩模图案图。 使得当在掩模经受曝光拍摄以形成基板上的图案和在基板上形成图案之后形成的基板上的图案之间的二维形状参数的偏移量适合在预定范围内时，确定曝光 基于掩模图案图，在基板上形成图案的曝光中的每个位置。

公开(公告)号：US20080250381A1

公开(公告)日：2008-10-09

申请号：US12062859

申请日：2008-04-04

申请人： Toshiya KOTANI ,  Yasunobu Kai ,  Soichi Inoue ,  Satoshi Tanaka ,  Shigeki Nojima ,  Kazuyuki Masukawa ,  Koji Hashimoto

发明人： Toshiya KOTANI ,  Yasunobu Kai ,  Soichi Inoue ,  Satoshi Tanaka ,  Shigeki Nojima ,  Kazuyuki Masukawa ,  Koji Hashimoto

IPC分类号： G06F17/50

CPC分类号： G03F7/70625 ,  G03F7/70525 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： A parameter adjustment method for a plurality of manufacturing devices to form a pattern of a semiconductor device on a substrate using the manufacturing devices includes: adjusting a parameter adjustable for a manufacturing device serving as a reference manufacturing device so as to fall within a range of a predetermined permissible variation and defining the adjusted parameter as a reference parameter of the reference manufacturing device; obtaining a first shape of a pattern of a semiconductor device to be formed on a substrate using the reference manufacturing device from a mask to form the pattern on the substrate when the reference parameter is set to the reference manufacturing device and defining the obtained first shape as a reference finished shape; defining an adjustable parameter of another to-be-adjusted manufacturing device as a to-be-adjusted parameter of the to-be-adjusted manufacturing device; obtaining a second shape of the pattern formed on the substrate using the to-be-adjusted manufacturing device from the mask when the defined to-be-adjusted parameter is set to the to-be-adjusted manufacturing device and defining the obtained second shape as a to-be-adjusted finished shape; calculating a difference amount between the reference finished shape and the to-be-adjusted finished shape; repeatedly calculating the difference amount by changing the to-be-adjusted parameter until the difference amount becomes equal to or less than a predetermined reference value; outputting as a parameter of the to-be-adjusted manufacturing device the to-be-adjusted parameter having the difference amount equal to or less than the predetermined reference value or the to-be-adjusted parameter having the difference amount which becomes equal to or less than the predetermined reference value through the repeated calculation.

摘要翻译： 用于使用该制造装置在基板上形成半导体器件的图案的多个制造装置的参数调整方法包括：调整作为参考制造装置的制造装置可调节的参数，使其落在 预定的允许变化并将调整参数定义为参考制造装置的参考参数; 使用参考制造装置从掩模获得要在基板上形成的半导体器件的图案的第一形状，以在将参考参数设置为参考制造装置并将所获得的第一形状定义为 参考完成形状; 将另一个待调节制造装置的可调参数定义为待调整制造装置的待调整参数; 当将所述规定的待调整参数设定为所述待调节制造装置并且将所获得的第二形状定义为所述第二形状时，从所述掩模获得使用所述待调节制造装置在所述基板上形成的所述图案的第二形状 一个待调整的成品形状; 计算参考完成形状和待调整完成形状之间的差值; 通过改变待调整参数重复计算差值，直到差值变得等于或小于预定参考值; 作为待调整制造装置的参数输出具有等于或小于预定参考值的差值的待调整参数或具有等于或等于或等于或等于 通过重复计算小于预定的参考值。

公开(公告)号：US20130159944A1

公开(公告)日：2013-06-20

申请号：US13615691

申请日：2012-09-14

申请人： Taiga UNO ,  Toshiya KOTANI ,  Satoshi TANAKA

发明人： Taiga UNO ,  Toshiya KOTANI ,  Satoshi TANAKA

IPC分类号： G06F17/50

CPC分类号： G03F7/70941 ,  G03F1/70

摘要： A flare map calculating method of an embodiment calculates an optical image intensity distribution in each division region set in a pattern region. Furthermore, an average value of the optical image intensity distribution is calculated in each division region. A pattern or plural patterns, which has a pattern density corresponding to the average value, is calculated as a corresponding density pattern in each division region. Furthermore, a density map, which represents a pattern density distribution within the pattern region, is generated based on the corresponding density pattern, and a flare map representing a flare intensity distribution within the pattern region is calculated by convolution integral of the density map and a point spread function.

摘要翻译： 实施例的耀斑映射计算方法计算在图案区域中设置的每个划分区域中的光学图像强度分布。 此外，在每个划分区域中计算出光学图像强度分布的平均值。 在每个划分区域中计算具有对应于平均值的图案密度的图案或多个图案作为相应的浓度图案。 此外，基于对应的浓度模式生成表示图案区域内的图案密度分布的密度图，并且通过密度图和a的卷积积分来计算表示图案区域内的耀斑强度分布的耀斑图 点扩散功能。

公开(公告)号：US20110065028A1

公开(公告)日：2011-03-17

申请号：US12874756

申请日：2010-09-02

申请人： Katsuyoshi KODERA ,  Satoshi TANAKA ,  Toshiya KOTANI ,  Soichi INOUE

发明人： Katsuyoshi KODERA ,  Satoshi TANAKA ,  Toshiya KOTANI ,  Soichi INOUE

IPC分类号： G03F1/00 ,  G03F7/20

CPC分类号： G03F1/36

摘要： According to the embodiments, each of a main pattern of a mask to be transferred onto a substrate by using a lithography process, a first assist pattern that improves a resolution of an on-substrate pattern obtained by transferring the main pattern onto the substrate, and a second assist pattern that suppresses a transfer property of the first assist pattern onto the substrate is placed as a mask pattern.

摘要翻译： 根据实施例，通过使用光刻工艺将要转印到基板上的掩模的主图案，提高通过将主图案转印到基板上而获得的基板上图案的分辨率的第一辅助图案，以及 将第一辅助图案的转印特性抑制在基板上的第二辅助图案作为掩模图案。

公开(公告)号：US20080301621A1

公开(公告)日：2008-12-04

申请号：US12129167

申请日：2008-05-29

申请人： Kazuya FUKUHARA ,  Tatsuhiko HIGASHIKI ,  Toshiya KOTANI ,  Satoshi TANAKA ,  Takashi SATO ,  Akiko MIMOTOGI ,  Masaki SATAKE

发明人： Kazuya FUKUHARA ,  Tatsuhiko HIGASHIKI ,  Toshiya KOTANI ,  Satoshi TANAKA ,  Takashi SATO ,  Akiko MIMOTOGI ,  Masaki SATAKE

IPC分类号： G06F17/50

CPC分类号： G03F1/36

摘要： In a model-based OPC which makes a suitable mask correction for each mask pattern using an optical image intensity simulator, a mask pattern is divided into subregions and the model of optical image intensity simulation is changed according to the contents of the pattern in each subregion. When the minimum dimensions of the mask pattern are smaller than a specific threshold value set near the exposure wavelength, the region is calculated using a high-accuracy model and the other regions are calculated using a high-speed model.

摘要翻译： 在基于模型的OPC中，使用光学图像强度模拟器对每个掩模图案进行适当的掩模校正，将掩模图案划分为子区域，并且根据每个子区域中的图案的内容来改变光学图像强度模拟模型 。 当掩模图案的最小尺寸小于在曝光波长附近设置的特定阈值时，使用高精度模型计算该区域，并且使用高速模型计算其它区域。