公开(公告)号：US08816786B2

公开(公告)日：2014-08-26

申请号：US13632173

申请日：2012-10-01

Applicant: Tensorcom, Inc.

Inventor： KhongMeng Tham

IPC: H03L5/00 ,  H03B5/36

CPC classification number: H03B5/364 ,  H03B5/06 ,  H03B2200/0088 ,  H03B2200/0094 ,  H03B2201/031 ,  H03L5/00

Abstract: A large gain is used to start up the oscillation of the crystal quickly. Once the oscillation starts, the amplitude is detected. A control circuit determines based on the measured amplitude to disable a low resistance path in the controlled switch array to reduce the applied gain below the power dissipation specification of the crystal. Another technique introduces a mixed-signal controlled power supply multi-path resistive array which tailors the maximum current to the crystal. A successive approximation register converts the amplitude into several partitions and enables/disables one of several power routing paths to the inverter of the oscillator. This allows a better match between the crystal selected by the customer and the on-chip drive circuitry to power up the oscillator without stressing the crystal. The “l/f” noise of the oscillator circuit is minimized by operating transistors in the triode region instead of the linear region.

Abstract translation: 使用大的增益快速启动晶体振荡。 一旦振荡开始，就检测振幅。 控制电路基于测量的幅度来确定禁用受控开关阵列中的低电阻路径，以将施加的增益降低到低于晶体的功率耗散规格。 另一种技术引入了一种混合信号控制电源多路径电阻阵列，可以调整晶体的最大电流。 逐次逼近寄存器将振幅转换成几个分区，并使能/禁用振荡器的反相器的几个电源路由路径之一。 这允许由客户选择的晶体和片上驱动电路之间更好地匹配，以在不强调晶体的情况下加电振荡器。 通过在三极管区域中操作晶体管而不是线性区域来使振荡器电路的“l / f”噪声最小化。