公开(公告)号：US20060146601A1

公开(公告)日：2006-07-06

申请号：US11024945

申请日：2004-12-30

申请人： Jacques Miltat ,  Yoshinobu Nakatani

发明人： Jacques Miltat ,  Yoshinobu Nakatani

IPC分类号： G11C11/14

CPC分类号： G11C11/16

摘要： A magnetoresistive hybrid memory cell includes first and second stacked structures. The first stacked structure includes a magnetic tunnel junction including first and second magnetic regions stacked in a parallel, overlying relationship separated by a layer of non-magnetic material, wherein the first magnetic region has a fixed first magnetic moment vector and the second magnetic region has a free second magnetic moment vector that is switchable between the same and opposite directions with respect to the fixed first magnetic moment vector. The second stacked structure is at least partly arranged in a lateral relationship with respect to the first stacked structure and includes a third magnetic region having a fixed third magnetic moment vector and the second magnetic region. The first and second structures are arranged between at least two electrodes in electrical contact therewith.

摘要翻译： 磁阻混合存储单元包括第一和第二堆叠结构。 第一堆叠结构包括磁隧道结，该磁隧道结包括由非磁性材料层隔开的平行的叠置关系堆叠的第一和第二磁区，其中第一磁区具有固定的第一磁矩矢量，第二磁区具有 相对于固定的第一磁矩矢量可在相同和相反方向之间切换的自由的第二磁矩矢量。 第二堆叠结构至少部分地相对于第一堆叠结构布置在横向关系中，并且包括具有固定的第三磁矩矢量和第二磁性区域的第三磁性区域。 第一和第二结构布置在与其接触的至少两个电极之间。