公开(公告)号：US20240072153A1

公开(公告)日：2024-02-29

申请号：US18506101

申请日：2023-11-09

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Po-Yu Yang ,  Hsun-Wen Wang

IPC: H01L29/66 ,  H01L29/778

CPC classification number: H01L29/66431 ,  H01L29/7786

Abstract: A method for forming a high electron mobility transistor includes the steps of providing a substrate, forming a channel layer, a barrier layer, and a first passivation layer sequentially on the substrate, forming a plurality of trenches through at least a portion of the first passivation layer, forming a second passivation layer on the first passivation layer and covering along sidewalls and bottom surfaces of the trenches, and forming a conductive plate structure on the second passivation layer and filling the trenches.

公开(公告)号：US20220376100A1

公开(公告)日：2022-11-24

申请号：US17367640

申请日：2021-07-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Po-Yu Yang ,  Hsun-Wen Wang

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/06

Abstract: A high electron mobility transistor includes an epitaxial stack on a substrate, a gate structure on the epitaxial stack, a passivation layer on the epitaxial stack and covering the gate structure, and an air gap between the passivation layer and the gate structure.