公开(公告)号：US20230369481A1

公开(公告)日：2023-11-16

申请号：US18227329

申请日：2023-07-28

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Po-Yu Yang ,  Hsun-Wen Wang

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/06

CPC classification number: H01L29/7786 ,  H01L29/6656 ,  H01L29/0649 ,  H01L29/66462

Abstract: A method for forming a high electron mobility transistor includes the steps of forming an epitaxial stack on a substrate, forming a gate structure on the epitaxial stack, forming an insulating layer covering the epitaxial stack and the gate structure, forming a passivation layer on the insulating layer, forming an opening on the gate structure and through the passivation layer to expose the insulating layer, and removing a portion of the insulating layer through the opening to form an air gap between the gate structure and the passivation layer.

公开(公告)号：US20220246750A1

公开(公告)日：2022-08-04

申请号：US17207719

申请日：2021-03-21

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Po-Yu Yang ,  Hsun-Wen Wang

IPC: H01L29/778 ,  H01L29/66

Abstract: The present disclosure relates to a semiconductor device and its manufacturing method, and the semiconductor device includes a substrate, a channel layer, a gate electrode, a first electrode, a second electrode, and a metal plate. The channel layer is disposed on the substrate, and the gate electrode is disposed on the channel layer. The first electrode and the second electrode are disposed on the channel layer, at two opposite sides of the gate electrode respectively. The metal plate is disposed over the channel layer, between the first electrode and the gate electrode. The metal plate includes a first extending portion and a second extending portion, wherein the second extending portion extends towards the substrate without contacting the channel layer, and the first extending portion extends toward and directly contacts the first electrode or the second electrode.

公开(公告)号：US20220238694A1

公开(公告)日：2022-07-28

申请号：US17203723

申请日：2021-03-16

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Po-Yu Yang ,  Hsun-Wen Wang

IPC: H01L29/66 ,  H01L29/778

Abstract: A high electron mobility transistor (HEMT) includes a substrate, a channel layer disposed on the substrate, a barrier layer disposed on the channel layer, a first passivation layer disposed on the barrier layer, a plurality of trenches through at least a portion of the first passivation layer, and a conductive plate structure disposed on the first passivation layer. The conductive plate structure includes a base portion over the trenches and a plurality of protruding portions extending from a lower surface of the base portion and into the trenches.

公开(公告)号：US12274080B2

公开(公告)日：2025-04-08

申请号：US18506101

申请日：2023-11-09

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Po-Yu Yang ,  Hsun-Wen Wang

IPC: H01L29/66 ,  H01L29/778 ,  H10D30/01 ,  H10D30/47

Abstract: A method for forming a high electron mobility transistor includes the steps of providing a substrate, forming a channel layer, a barrier layer, and a first passivation layer sequentially on the substrate, forming a plurality of trenches through at least a portion of the first passivation layer, forming a second passivation layer on the first passivation layer and covering along sidewalls and bottom surfaces of the trenches, and forming a conductive plate structure on the second passivation layer and filling the trenches.

公开(公告)号：US11855174B2

公开(公告)日：2023-12-26

申请号：US17203723

申请日：2021-03-16

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Po-Yu Yang ,  Hsun-Wen Wang

IPC: H01L29/66 ,  H01L29/778

CPC classification number: H01L29/66431 ,  H01L29/7786

Abstract: A high electron mobility transistor (HEMT) includes a substrate, a channel layer disposed on the substrate, a barrier layer disposed on the channel layer, a first passivation layer disposed on the barrier layer, a plurality of trenches through at least a portion of the first passivation layer, and a conductive plate structure disposed on the first passivation layer. The conductive plate structure includes a base portion over the trenches and a plurality of protruding portions extending from a lower surface of the base portion and into the trenches.

公开(公告)号：US20250040172A1

公开(公告)日：2025-01-30

申请号：US18915372

申请日：2024-10-15

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Po-Yu Yang ,  Hsun-Wen Wang

IPC: H01L29/778 ,  H01L29/06 ,  H01L29/66

Abstract: A method for forming a high electron mobility transistor includes the steps of forming an epitaxial stack on a substrate; forming a gate structure on the epitaxial stack, wherein the gate structure comprises a semiconductor gate layer, a metal gate layer on the semiconductor gate layer, and a spacer on a top surface of the semiconductor gate layer and a sidewall of the metal gate layer; forming a passivation layer covering the epitaxial stack and the gate structure; forming an opening through the passivation layer on the gate structure to expose a portion of the spacer; and removing the spacer through the opening to form an air gap between the sidewall of metal gate layer, the top surface of the semiconductor gate layer and a sidewall of the passivation layer.

公开(公告)号：US12266722B2

公开(公告)日：2025-04-01

申请号：US17207719

申请日：2021-03-21

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Po-Yu Yang ,  Hsun-Wen Wang

IPC: H01L29/778 ,  H01L29/66

Abstract: The present disclosure relates to a semiconductor device and its manufacturing method, and the semiconductor device includes a substrate, a channel layer, a gate electrode, a first electrode, a second electrode, and a metal plate. The channel layer is disposed on the substrate, and the gate electrode is disposed on the channel layer. The first electrode and the second electrode are disposed on the channel layer, at two opposite sides of the gate electrode respectively. The metal plate is disposed over the channel layer, between the first electrode and the gate electrode. The metal plate includes a first extending portion and a second extending portion, wherein the second extending portion extends towards the substrate without contacting the channel layer, and the first extending portion extends toward and directly contacts the first electrode or the second electrode.

公开(公告)号：US12142676B2

公开(公告)日：2024-11-12

申请号：US18227329

申请日：2023-07-28

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Po-Yu Yang ,  Hsun-Wen Wang

IPC: H01L29/778 ,  H01L29/06 ,  H01L29/66

Abstract: A method for forming a high electron mobility transistor includes the steps of forming an epitaxial stack on a substrate, forming a gate structure on the epitaxial stack, forming an insulating layer covering the epitaxial stack and the gate structure, forming a passivation layer on the insulating layer, forming an opening on the gate structure and through the passivation layer to expose the insulating layer, and removing a portion of the insulating layer through the opening to form an air gap between the gate structure and the passivation layer.

公开(公告)号：US20240355920A1

公开(公告)日：2024-10-24

申请号：US18761282

申请日：2024-07-01

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Po-Yu Yang ,  Hsun-Wen Wang

IPC: H01L29/778 ,  H01L29/06 ,  H01L29/66

CPC classification number: H01L29/7786 ,  H01L29/0649 ,  H01L29/66462 ,  H01L29/6656

Abstract: A high electron mobility transistor includes an epitaxial stack on a substrate, a gate structure on the epitaxial stack, a passivation layer on the epitaxial stack and the gate structure, and an air gap between the passivation layer and the gate structure. The gate structure includes a semiconductor gate layer and a metal gate layer on the semiconductor gate layer. The air gap is in direct contact with a sidewall of the passivation layer, a sidewall of the metal gate layer, a sidewall and a top surface of the semiconductor gate layer.

公开(公告)号：US12051740B2

公开(公告)日：2024-07-30

申请号：US17367640

申请日：2021-07-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Po-Yu Yang ,  Hsun-Wen Wang

IPC: H01L29/778 ,  H01L29/06 ,  H01L29/66

CPC classification number: H01L29/7786 ,  H01L29/0649 ,  H01L29/66462 ,  H01L29/6656

Abstract: A high electron mobility transistor includes an epitaxial stack on a substrate, a gate structure on the epitaxial stack, a passivation layer on the epitaxial stack and covering the gate structure, and an air gap between the passivation layer and the gate structure.