公开(公告)号：US11101387B2

公开(公告)日：2021-08-24

申请号：US16344018

申请日：2018-11-19

Applicant: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Lisheng Li ,  Peng He ,  Yuan Yan

IPC: H01L29/78 ,  H01L29/786 ,  H01L21/02 ,  H01L29/10 ,  H01L29/66

Abstract: A low temperature polysilicon layer, a thin film transistor, and a method for manufacturing same are provided. The low temperature polysilicon layer includes a substrate, at least one buffer layer, and a polysilicon layer. The polysilicon layer is disposed on the at least one buffer layer. The polysilicon layer includes a channel region, two low doped regions disposed on two sides of the channel region, and two high doped regions disposed on an outer side of the low doped regions. Thicknesses of an edge of the channel region and at least one portion of the low doped regions are less than a thickness of another position of the polysilicon layer.

公开(公告)号：US10964790B1

公开(公告)日：2021-03-30

申请号：US16097838

申请日：2018-09-14

Applicant: Wuhan China Star Optoelectronics Technology Co., Ltd.

Inventor： Yuan Yan ,  Lisheng Li ,  Dewei Song

IPC: H01L29/417 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12 ,  H01L29/45 ,  H01L21/311

Abstract: The present invention teaches a TFT substrate manufacturing method and a TFT substrate. The method configures contact region vias in the source/drain contact regions at two ends of the active layer, provides buffer layer troughs in the buffer layer beneath the contact region vias, and forms undercut structure between the buffer layer troughs and the active layer around the contact region vias, thereby separating the transparent conductive layer at the contact region vias, and extending the source/drain electrodes to contact the source/drain contact regions of the active layer from below through the buffer layer troughs. The present invention therefore prevents the occurrence of Schottky contact barrier resulted from the contact between poly-Si and ITO in the 7-mask process by letting the source/drain electrodes to directly contact and form ohmic contact with the source/drain contact regions of the active layer, thereby enhancing the electronic mobility of TFT devices.