Low drop out voltage regulator
    11.
    发明申请
    Low drop out voltage regulator 有权
    低压降稳压器

    公开(公告)号:US20070052400A1

    公开(公告)日:2007-03-08

    申请号:US11221467

    申请日:2005-09-07

    申请人: Jason Chilcote

    发明人: Jason Chilcote

    IPC分类号: G05F1/00

    CPC分类号: G05F1/575

    摘要: A low dropout voltage regulator apparatus is disclosed, which includes a low dropout voltage regulator circuit connected to a supply voltage, wherein at least one input voltage is input to the low dropout voltage regulator circuit to generate at least one output voltage from the low dropout voltage regulator circuit. A feedback compensation component is also provided, which is integrated with the low dropout voltage regulator circuit. The feedback compensation component is located generally within the low dropout voltage regulator circuit to take advantage of a Miller effect associated with the low dropout voltage regulator circuit in order to withstand high voltages associated with the supply voltage and generate the output voltage from the low dropout voltage regulator circuit.

    摘要翻译: 公开了一种低压差稳压器装置,其包括连接到电源电压的低压差稳压器电路,其中至少一个输入电压被输入到低压差稳压器电路以从低压差电压产生至少一个输出电压 调节电路。 还提供了一个反馈补偿元件,它与低压差稳压器电路集成在一起。 反馈补偿分量通常位于低压降稳压器电路内,以利用与低压差稳压器电路相关联的米勒效应,以便承受与电源电压相关的高电压并从低压降电压产生输出电压 调节电路。

    Permalloy sensor
    12.
    发明申请
    Permalloy sensor 有权
    坡莫合金传感器

    公开(公告)号:US20050213257A1

    公开(公告)日:2005-09-29

    申请号:US10811473

    申请日:2004-03-24

    CPC分类号: H01L43/08

    摘要: A permalloy sensor having high sensitivity is presented A substrate and a sensor has a first surface having a wafer level anisotropy in a given direction. A permalloy resistor pattern of individual runners is deposited on the surface such that the mechanical length of each of said individual runners is perpendicular to the wafer level anisotropy to cause the sensor to have an anisotropy of about 90°. The permalloy is deposited as a thin film and a silicon wafer is the preferred substrate.

    摘要翻译: 具有高灵敏度的坡莫合金传感器呈现基板和传感器具有在给定方向上具有晶片级各向异性的第一表面。 单个流道的坡莫合金电阻器图案沉积在表面上,使得每个所述单个流道的机械长度垂直于晶片级各向异性,以使传感器具有大约90°的各向异性。 坡莫合金作为薄膜沉积,硅晶片是优选的基板。

    Permalloy magnetization reversal sensor
    13.
    发明申请
    Permalloy magnetization reversal sensor 审中-公开
    坡莫合金磁化反转传感器

    公开(公告)号:US20050088175A1

    公开(公告)日:2005-04-28

    申请号:US10692883

    申请日:2003-10-25

    IPC分类号: G01R33/02 G01R33/09 G01B7/30

    CPC分类号: G01R33/02

    摘要: A magnetic sensor is disclosed in which a ferromagnetic runner (e.g., a permalloy runner) can be located relative to a target. A coil structure is generally wound about the ferromagnetic runner, such that when a magnetic field changes direction along an axial length of the ferromagnetic runner, a voltage is induced in the coil structure that is proportional to a time range of change of a magnetic flux density, due to the sudden internal magnetization reversal of the runner. Additionally, an interfacing circuit can be provided in which the ferromagnetic runner and the coil structure are integrated with the interfacing circuit to thereby produce a magnetic sensor for magnetically sensing the target. The magnetic sensor is highly sensitive and can operate without electrical current or upon a negligible electrical current.

    摘要翻译: 公开了一种磁传感器,其中铁磁流道(例如,坡莫合金流道)可相对于目标定位。 线圈结构通常围绕铁磁流道缠绕,使得当磁场沿着铁磁流道的轴向长度改变方向时,在线圈结构中感应出与磁通密度变化的时间范围成比例的电压 ,由于跑步者的内部磁化反转突然。 此外,可以提供一种接口电路,其中铁磁流道和线圈结构与接口电路集成,从而产生用于磁感测目标的磁传感器。 磁传感器是高灵敏度的,可以在没有电流或无法忽视的电流下工作。