DYNAMIC ELEMENT MATCHING IN AN INTEGRATED CIRCUIT

    公开(公告)号:US20180356294A1

    公开(公告)日:2018-12-13

    申请号:US15616765

    申请日:2017-06-07

    Applicant: Xilinx, Inc.

    Abstract: An example dynamic element matching (DEM) circuit includes: a plurality of bipolar junction transistors (BJTs), each of the plurality of BJTs having a base terminal and a collector terminal coupled to electrical ground; a plurality of pairs of force switches, each pair of force switches coupled to an emitter of a respective one of the plurality of BJTs; a plurality of pairs of sense switches, where each pair of sense switches is coupled to the emitter of a respective one of the plurality of BJTs, a first switch in each pair of sense switches is coupled to a first node, and a second switch in each pair of sense switches is coupled to a second node; a first current source coupled to a first switch in each pair of force switches; and a second current source coupled to a second switch in each pair of force switches.

    AREA-EFFICIENT HIGH-ACCURACY BANDGAP VOLTAGE REFERENCE CIRCUIT

    公开(公告)号:US20180074533A1

    公开(公告)日:2018-03-15

    申请号:US15266947

    申请日:2016-09-15

    Applicant: Xilinx, Inc.

    CPC classification number: G05F1/468

    Abstract: An integrated circuit includes a reference voltage circuit. The reference voltage circuit includes a bipolar junction transistor (BJT) configured to receive a first current during a first phase of a clock cycle to generate a first base-emitter junction voltage, and receive a second current during a second phase of the clock cycle to generate a second base-emitter junction voltage. The reference voltage circuit includes a switched capacitor circuit configured to provide a reference voltage associated with the first base-emitter junction voltage and the second base-emitter junction voltage.

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