Wafer transfer pod for reducing wafer particulate contamination
    11.
    发明授权
    Wafer transfer pod for reducing wafer particulate contamination 有权
    用于减少晶圆颗粒污染的晶圆转运荚

    公开(公告)号:US08544651B2

    公开(公告)日:2013-10-01

    申请号:US13354969

    申请日:2012-01-20

    IPC分类号: B65D81/02 B65D81/18

    CPC分类号: H01L21/67386 H01L21/67389

    摘要: A wafer transport pod for storing or transporting semiconductor wafers during semiconductor wafer processing includes a body having a top panel, a bottom panel, a back panel, two side panels and a front panel. The two side panels are configured for receiving the semiconductor wafers therebetween. The two side panels have a plurality of separately hermetically sealed partitions inside the body, any two of the sealed partitions for sealing a wafer therebetween and for preventing wafer contamination. The front panel provides ingress and egress for the semiconductor wafers to and from the wafer transport pod.

    摘要翻译: 用于在半导体晶片处理期间存储或传输半导体晶片的晶片传输盒包括具有顶板,底板,后面板,两个侧板和前面板的主体。 两个侧面板被构造成用于接收它们之间的半导体晶片。 两个侧面板在主体内具有多个单独的气密密封的隔板,用于密封其间的晶片的任何两个密封隔板和用于防止晶片污染。 前面板为半导体晶片提供进出晶片传输盒的入口和出口。

    Sputtering apparatus and manufacturing method of metal layer/metal compound layer by using thereof
    13.
    发明授权
    Sputtering apparatus and manufacturing method of metal layer/metal compound layer by using thereof 有权
    金属层/金属化合物层的溅射装置及其制造方法

    公开(公告)号:US06811662B1

    公开(公告)日:2004-11-02

    申请号:US10604857

    申请日:2003-08-22

    申请人: Yu-Cheng Liu

    发明人: Yu-Cheng Liu

    IPC分类号: C23C1434

    摘要: A sputtering apparatus is provided. The sputtering apparatus comprises cooling water system having a temperature-controlling device for controlling the temperature of the sidewalls of the reaction chamber. During the deposition process of titanium/titanium nitride, the sidewall temperature of the chamber is controlled at about 50° C.˜70° C. for reducing the difference of temperature distribution in the chamber so that the reaction temperature within the reaction chamber can be rendered substantially uniform.

    摘要翻译: 提供溅射装置。 溅射装置包括具有用于控制反应室的侧壁温度的温度控制装置的冷却水系统。 在钛/氮化钛的沉积过程中,将室的侧壁温度控制在约50℃〜70℃,以减小室内温度分布的差异,使得反应室内的反应温度可以为 呈现基本均匀。